AND type flash memory

Abstract

The invention discloses an AND type flash memory. The AND type flash memory includes a memory cell array, a plurality of page buffers and a plurality of voltage shifting circuits. The memory cell array is coupled to a plurality of bits lines and source lines. The page buffers are respectively coupled to the bit lines through a plurality of switches, and respectively provides a plurality of controlsignals. The control signals are transited between a first voltage and a reference voltage. The voltage shifting circuits respectively receive the control signals, generates a plurality of driving signals by shifting voltage values of the control signals, and provides the driving signals to the bit lines. Wherein, the driving signals are transited between a second voltage and the reference voltage, the second voltage is larger than the first voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, relates to an AND flash memory, and in particular relates to an AND flash memory with a multi-dimensional storage unit array. Background technique [0002] With the advancement of electronic technology, electronic devices have become an important tool in people's lives. It is an important subject in this field to install high-quality non-volatile memory elements in electronic devices. [0003] Among existing non-volatile memories, flash memory has been frequently used in recent years. Common flash memories include NAND, NOR, and the newer AND flash memory. The AND type flash memory can be applied in a multi-dimensional flash memory storage unit array, wherein, in the prior art, when erasing or programming is to be performed on the AND type flash memory storage unit, the enabled bit line needs to be In the memory cell, the associated bit lines and source lines are short-circuited with ea...

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Problems solved by technology

The memory cell array is coupled to a plurality of bit lines

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