Unlock instant, AI-driven research and patent intelligence for your innovation.

Ion source thermal gas bushing

A technology of ion source and gas, which is applied in the manufacture of ion beam tubes, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as accelerating system preventive maintenance plans and limiting the life of gas tubes

Active Publication Date: 2021-03-19
VARIAN SEMICON EQUIP ASSOC INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This deposit limits gas tube life and speeds up the system's preventive maintenance schedule

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion source thermal gas bushing
  • Ion source thermal gas bushing
  • Ion source thermal gas bushing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] figure 1 An example of an interconnection between ion source chamber 100 and dopant source 150 is shown. Ion source chamber 100 is typically constructed of a conductive material such as tungsten, molybdenum, or another metal. The ion source chamber 100 typically has an opening 101 through which ions generated in the ion source chamber 100 can be extracted.

[0018] In certain embodiments, the ion source may be a radio frequency (RF) ion source. In this embodiment, an RF antenna may be positioned against the dielectric window. This dielectric window may form part or all of one of the chamber walls. RF antennas may contain conductive materials such as copper. The RF power supply is in electrical communication with the RF antenna. The RF power supply can supply RF voltage to the RF antenna. The power supplied by the RF power supply may be between 0.1 kW and 10 kW, and may be of any suitable frequency, eg, between 1 MHz and 15 MHz. Additionally, the power supplied by...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system for reducing clogging and deposition of feed gas on a gas tube entering an ion source chamber is disclosed. To lower the overall temperature of the gas tube, a gas bushing, made of a thermally isolating material, is disposed between the ion source chamber and the gas tube. The gas bushing is made of a thermally isolating material, such as titanium, quartz, boron nitride, zirconia or ceramic. The gas bushing has an inner channel in fluid communication with the ion source chamber and the gas tube to allow the flow of feed gas to the ion source chamber. The gas bushing may have a shape that is symmetrical, allowing it to be flipped to extend its useful life. In some embodiments, the gas tube may be in communication with a heat sink to maintain its temperature.

Description

technical field [0001] Embodiments of the invention relate to systems for reducing the temperature of gas tubes entering an ion source chamber to minimize deposition of feed gas in the gas tubes. Background technique [0002] The fabrication of semiconductor devices involves multiple discrete and complex processes. One such process may be an etching process in which material is removed from the workpiece. Another process may be a deposition process in which material is deposited on the workpiece. Yet another process may be an ion implantation process in which ions are implanted into a workpiece. [0003] Ion sources are traditionally used to generate ions which are then used to perform these processes. The ion source may utilize an indirectly heated cathode (IHC), a Bernas source, a capacitively coupled plasma source, or an inductively coupled source disposed in or near the ion source chamber. The gas tube is in fluid communication with the ion source to supply the desir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01J37/08H01J37/3171H01J2237/006H01J2237/022H01J27/022H01L21/67213H01L21/67017H01L21/67098H01L21/67248
Inventor 奎格·R·钱尼亚当·M·麦劳克林
Owner VARIAN SEMICON EQUIP ASSOC INC