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Cleaning system for removing deposits from pump in an exhaust of a substrate processing system

A technology for processing systems and substrates, which is applied in the field of cleaning systems, and can solve the problems of not solving the simultaneous flow of first and second reaction gases, increasing system costs, and the like

Pending Publication Date: 2021-03-19
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this approach increases system cost due to the addition of pumps, valves and piping
This method also does not address the situation where the first and second reactant gases need to flow simultaneously

Method used

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  • Cleaning system for removing deposits from pump in an exhaust of a substrate processing system
  • Cleaning system for removing deposits from pump in an exhaust of a substrate processing system
  • Cleaning system for removing deposits from pump in an exhaust of a substrate processing system

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Embodiment Construction

[0039] A remote plasma source (RPS) can be used to provide free radicals to clean components within the processing chamber. In some examples, the free radicals include halogen species. The free radicals typically recombine before reaching a pump located in a discharge line connected to the outlet of the process chamber. As a result, remote plasma sources used to clean process chamber components are not very effective at cleaning pumps, and deposits can build up over time.

[0040] Cleaning systems according to the present disclosure use a free radical generator to generate free radicals that are introduced into the exhaust gas line between the process chamber and the pump. In some examples, the free radical generator generates free radicals that are introduced into the exhaust gas line between the turbomolecular pump and the roughing pump. In some examples, the radical generator includes a plasma source or a microwave source. In some examples, a gas containing halogen speci...

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Abstract

An exhaust system for a substrate processing system includes a radical generator configured to receive a gas mixture including halogen species and to generate halogen radicals, a first pump to pump exhaust gas from an exhaust outlet of a processing chamber, and a first valve configured to selectively fluidly connect an outlet of the radical generator to the first pump downstream from the outlet ofthe processing chamber.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Patent Application No. 62 / 685,532, filed June 15, 2018. The entire disclosures of the above-cited applications are hereby incorporated by reference. technical field [0003] The present disclosure relates to substrate processing systems, and more particularly, to a cleaning system for removing deposits from a pump in an exhaust of a substrate processing system. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor impliedly admitted to be prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that cannot be determined to be prior art at the time of filing. technology. [0005] Substrate processing systems may be used to perform etching, depo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H05H1/46H01J37/32H01L21/02
CPCH01J37/32834H01J37/32357H01J37/32862H01L21/67017H01L21/67028H01L21/67276H01L21/67253H05H1/46H01J37/32009H01L21/02
Inventor 克里希纳·比鲁刘刚伦纳德·许阿南德·查德拉什卡许吉顺
Owner LAM RES CORP