Method for forming semiconductor device

Abstract

The invention provides a method for forming a semiconductor device. The present disclosure describes a method to form a fin field effect transistor (finFET) and a nano-sheet transistor on a substrate.The method can include forming first and second vertical structures over a substrate, where each of the first and the second vertical structures can include a buffer region and a first channel layerformed over the buffer region. The method can further include disposing a masking layer over the first channel layer of the first and second vertical structures, removing a portion of the first vertical structure to form a first recess, forming a second channel layer in the first recess, forming a second recess in the second channel layer, and disposing an insulating layer in the second recess.

Description

technical field [0001] The embodiments of the present invention relate to the fabrication method and structure of integrating nanosheet field effect transistors and fin field effect transistors on a substrate. Background technique [0002] Advances in semiconductor technology have increased the demand for high storage capacity, faster processing systems, higher performance, and lower cost semiconductor devices. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices such as MOSFETs (including planar MOSFETs, FinFETs, or Nanosheet MOSFETs). The shrinking size also increases the complexity of the semiconductor manufacturing process. Contents of the invention [0003] In some embodiments, a method of forming a semiconductor device includes forming a first vertical structure and a second vertical structure on a substrate, wherein each of the first vertical structure and the second vertical structure includes a buffer zone and is...

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Problems solved by technology

Size reduction also increases the complexity of the semiconductor manufacturing process

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