Phase change memory and manufacturing method thereof

A phase-change memory and phase-change memory technology, which is applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of low-quality phase-change memory, and achieve the effect of improving performance, yield and quality

Pending Publication Date: 2021-04-02
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, as the bit density and integration of phase change memory increase, the quality of phase change memory is lower

Method used

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  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof

Examples

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example 1

[0134] Figure 5a to Figure 5k It is a manufacturing method of a phase change memory shown according to an exemplary embodiment. refer to Figure 5a to Figure 5k , the method includes the following steps:

[0135] Step 1: Refer to Figure 5a As shown, a first conductive material layer 1110 and a storage stack structure are formed on the surface of the substrate 1001, and a first mask layer 1271 covering the storage stack structure is formed; wherein, the storage stack structure includes: a third layer stacked sequentially from bottom to top The first electrode material layer 1211c, the gate material layer 1221, the first electrode material layer 1211a, the first adhesive material layer 1241a, the phase change memory material layer 1231, the second adhesive material layer 1241b, and the second electrode material layer layer 1211b; the first adhesive material layer 1241a is used to increase the adhesion between the first electrode material layer 1211a and the phase change sto...

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Abstract

The embodiment of the invention discloses a phase change memory and a manufacturing method thereof. The phase change memory comprises a phase change memory unit which comprises a phase change memory layer and a plurality of electrode layers which are arranged in a stacked manner, wherein the phase change memory layer is arranged between the two electrode layers; the phase change memory unit further comprises a conductive bonding layer which is arranged between the at least one electrode layer and the phase change memory layer and used for increasing the adhesive force between the at least oneelectrode layer and the phase change memory layer.

Description

technical field [0001] Embodiments of the present disclosure relate to the technical field of semiconductors, and in particular, to a phase-change memory and a manufacturing method thereof. Background technique [0002] As an emerging non-volatile memory device, phase-change memory has the high speed and long life of Dynamic Random Access Memory (DRAM) and the low-cost, non-volatile memory of Flash Memory (Flash Memory). lost advantage. In addition, it can be used in mobile devices due to its low power consumption and high level of integration. [0003] In the related art, memory cells can be stacked in a direction perpendicular to the substrate, so as to increase the bit density and integration of the phase change memory. However, as the bit density and integration level of phase change memory increase, the quality of phase change memory is lower. Therefore, how to improve the bit density and integration of the phase change memory while ensuring the quality of the phase ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/801H10N70/011
Inventor 杨红心刘峻杨海波
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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