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IGBT chip arrangement structure

A chip and heat sink technology, applied in the field of IGBT chip arrangement structure, can solve the problems of IGBT chip time difference, IGBT chip gate lead-out distance difference, IGBT chip current unbalance, etc., to achieve high reliability and current balance Good performance, good current flow

Pending Publication Date: 2021-04-09
赛晶亚太半导体科技(浙江)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The gate lead-out distance of the IGBT chip is quite different, which will cause a time difference between the opening and closing of different IGBT chips, resulting in the current imbalance between the IGBT chips at the moment when different IGBT chips are turned on.

Method used

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  • IGBT chip arrangement structure
  • IGBT chip arrangement structure
  • IGBT chip arrangement structure

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Embodiment Construction

[0013] Specific embodiments of the present invention will be further described in detail below. It should be understood that the description of the embodiments of the present invention here is not intended to limit the protection scope of the present invention.

[0014] Such as figure 1 As shown, it is a structural schematic diagram of an IGBT chip arrangement structure provided by the present invention. An arrangement structure of IGBT chips 20, used to be arranged on a ceramic copper-clad substrate 10, the ceramic copper-clad substrate 10 includes a heat sink, including a plurality of IGBTs welded on the ceramic copper-clad substrate 10 and arranged in a straight line chip 20 and a plurality of diode chips 30, each of the diode chips 30 is bonded and connected to the corresponding IGBT chip 20 through a bonding aluminum wire 40 and is a group, and the gate of the IGBT chip 20 of each group is connected through a gate The electrode bonding aluminum wire 21 is bonded and con...

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Abstract

The invention discloses an IGBT chip arrangement structure. The structure comprises a plurality of IGBT chips and a plurality of diode chips, which are welded on a ceramic copper-clad substrate and are linearly arranged, each diode chip is in bonding connection with the corresponding IGBT chip through a bonding aluminum wire, and the diode chips and the corresponding IGBT chip form a group; and the grid electrode of each group of IGBT chips is connected to the copper bar of the ceramic copper-clad substrate through a grid electrode bonding aluminum wire in a bonding mode, and the end, away from the diode chip, of each group of IGBT chips is connected to the metal plating layer of the ceramic copper-clad substrate through a bonding aluminum wire in a bonding mode. Through the arrangement mode of the IGBT chips arranged linearly, when the IGBT module starts to be conducted, the current balance of the IGBT chips arranged linearly is better than that of the IGBT chips arranged traditionally, the current sharing performance of the IGBT chips arranged linearly is better than that of the IGBT chips arranged traditionally, and the heat distribution of the IGBT chip is farther from the boundary of the safe working area of the IGBT chip, so that the reliability of the product is higher.

Description

technical field [0001] The invention belongs to the technical field of IGBT chips, in particular to an IGBT chip arrangement structure. Background technique [0002] The full name of IGBT is insulated gate bipolar transistor. It is the core device in the field of semiconductors and the "CPU" in the field of electrical equipment. important role, the market space is vast. [0003] At present, the packaging of general-purpose IGBT power modules in the market mainly adopts multi-chip interconnection technology, that is, multiple IGBT chips and diode chips are electrically connected through interconnection technology, and achieve the purpose of high voltage and high current, and then the chip is packaged in a hard shell. Realize product functions. [0004] The gate lead-out distance of the IGBT chip is quite different, which will cause a time difference between the turn-on and turn-off of different IGBT chips, resulting in an unbalanced current between the IGBT chips at the mom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/14H01L23/367H01L23/52H01L29/739H01L29/861
CPCH01L23/14H01L23/3672H01L23/52H01L29/7393H01L29/861
Inventor 马克·拉斐尔·施奈尔斯万·马蒂亚斯梁杰张强
Owner 赛晶亚太半导体科技(浙江)有限公司
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