Low-inductance crimping type semiconductor module

A crimping, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of difficult to achieve, low thermal resistance, difficult to achieve circuit connection, etc., to reduce thermal resistance, improve the use of longevity, improving the effect of design redundancy

CN113725199APending Publication Date: 2021-11-30南瑞联研半导体有限责任公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2021-11-30

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Abstract

The invention discloses a low-inductance crimping type semiconductor module, which comprises a module upper bridge arm P pole, a module lower bridge arm N pole, a first chip drain conductor, a second chip drain conductor, a first chip source conductor (8), a second chip source conductor, a pressure-bearing limiting structure, a module output end and at least one power chip unit group, and the power chip unit group comprises a first power chip unit and a second power chip unit; the module upper bridge arm P electrode, the first chip drain electrode conductor, the first power chip unit, the first chip source electrode conductor and the module output end are connected in sequence; and the module lower bridge arm N pole, the second chip source conductor, the second power chip unit, the second chip drain conductor and the module output end are connected in sequence. The semiconductor module has the advantages that the chips are connected through the structural design inside the module, longitudinal and short-distance current flowing is achieved, and then the semiconductor module which is low in inductance, low in thermal resistance and large in current and has the bridge type function is achieved.
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Description

technical field

[0001] The invention relates to a low-inductance crimping type semiconductor module, which belongs to the technical field of power semiconductor module packaging. Background technique

[0002] While power device technology continues to advance, more stringent requirements are placed on the heat dissipation performance and inductance of device packaging technology. At present, there are two main forms of packaging for high-power semiconductor modules. One is the base plate insulation module package, which is composed of chips, base plates, copper-clad ceramic substrates, bonding wires, sealing materials, insulating shells, and power terminals. Pouring insulating materials such as silicone gel or epoxy resin to isolate the chip from contact with the external environment (water, air, dust) and shorten the service life of the device.

[0003] The other is crimp-type packaging, which will reduce the thermal resistance of the chip, improve electrical performance a...

Examples

Embodiment Construction

[0035] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0036] Specifically, as figure 1 with 2 As shown, a low-inductance crimping semiconductor module structure of the present invention includes: module upper bridge arm P pole 1, module lower bridge arm N pole 2, first chip drain conductor 4, second chip drain conductor 11 , the first chip and the drain conductor connection layer 5, the second chip and the drain conductor connection layer 15, the first power chip unit 6, the second power chip unit 12, the first chip and the source conductor connection layer 7, the second Chip and source conductor connection layer 14 , first chip source conductor 8 , second chip source conductor 13 , pressure-bearing limiting structure 10 , module output terminal ...