Low-inductance crimping type semiconductor module

Abstract

The invention discloses a low-inductance crimping type semiconductor module, which comprises a module upper bridge arm P pole, a module lower bridge arm N pole, a first chip drain conductor, a second chip drain conductor, a first chip source conductor (8), a second chip source conductor, a pressure-bearing limiting structure, a module output end and at least one power chip unit group, and the power chip unit group comprises a first power chip unit and a second power chip unit; the module upper bridge arm P electrode, the first chip drain electrode conductor, the first power chip unit, the first chip source electrode conductor and the module output end are connected in sequence; and the module lower bridge arm N pole, the second chip source conductor, the second power chip unit, the second chip drain conductor and the module output end are connected in sequence. The semiconductor module has the advantages that the chips are connected through the structural design inside the module, longitudinal and short-distance current flowing is achieved, and then the semiconductor module which is low in inductance, low in thermal resistance and large in current and has the bridge type function is achieved.

Description

technical field [0001] The invention relates to a low-inductance crimping type semiconductor module, which belongs to the technical field of power semiconductor module packaging. Background technique [0002] While power device technology continues to advance, more stringent requirements are placed on the heat dissipation performance and inductance of device packaging technology. At present, there are two main forms of packaging for high-power semiconductor modules. One is the base plate insulation module package, which is composed of chips, base plates, copper-clad ceramic substrates, bonding wires, sealing materials, insulating shells, and power terminals. Pouring insulating materials such as silicone gel or epoxy resin to isolate the chip from contact with the external environment (water, air, dust) and shorten the service life of the device. [0003] The other is crimp-type packaging, which will reduce the thermal resistance of the chip, improve electrical performance a...

AI Technical Summary

Problems solved by technology

[0004] Due to the circuit and design concept of the baseboard insulating modular package in the prior art, the current usually flows laterally through the wire binding, resulting in a large inductance. flow capability

Although the press-fit package can realize the longitudinal flow of current and easily realize double-sided heat dissipation, multiple chips are generally used in parallel, that is, the entire module is equivalent to a high-power "single tube", and it is difficult to achieve convenient circuit connection

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