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Power semiconductor device, method of manufacturing same, and power conversion device

A technology of power semiconductors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as miniaturization limitations of power semiconductor devices, and achieve the effect of suppressing short circuits

Pending Publication Date: 2021-04-13
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For these reasons, power semiconductor devices have limitations in miniaturization

Method used

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  • Power semiconductor device, method of manufacturing same, and power conversion device
  • Power semiconductor device, method of manufacturing same, and power conversion device
  • Power semiconductor device, method of manufacturing same, and power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0048] first use Figure 1 to Figure 7 The configuration of the power semiconductor device of this embodiment will be described. In addition, for convenience of description, the X direction, the Y direction, and the Z direction are introduced. Such as Figure 1 to Figure 7 The Z-axis of each graph is shown in the figure 1 The middle and lower side is the positive side of the Z direction, opposite to it, in figure 2 and Figure 7 The upper middle side is the positive side in the Z direction. Also in Figure 5 and Figure 6 , the front side of the page, that is, the upper side in the top view, is the positive side in the Z direction.

[0049] figure 1 It is a schematic cross-sectional view showing a form in which a cooling member is provided in the power semiconductor device according to the first embodiment. figure 2 It is a schematic enlarged perspective view of a portion where a lead member of the power semiconductor device according to Embodiment 1 is extracted. ...

Embodiment approach 2

[0134] Figure 16 It is a schematic cross-sectional view showing a state in which a cooling member is provided in the power semiconductor device according to the second embodiment. Figure 17 It is a schematic enlarged perspective view of a portion where a lead member of the power semiconductor device according to Embodiment 2 is extracted. Figure 18 to show Figure 16 A schematic plan view of the power semiconductor device of , which is turned upside down and mounted on a circuit board. Figure 19 to show Figure 16 A schematic cross-sectional view of the entire form in which the power semiconductor device is mounted on a circuit board. which is Figure 16 , Figure 17 , Figure 18 , Figure 19 Respectively with Embodiment 1 figure 1 , figure 2 , Figure 5 , Figure 7 correspond. Use the following Figure 16 ~ Figure 19 The configuration of the power semiconductor device of the present embodiment will be schematically described.

[0135] refer to Figure 16 ,...

Embodiment approach 3

[0150] Figure 20 It is a schematic cross-sectional view showing one step of the method of manufacturing the power semiconductor device according to the third embodiment. Figure 21 to show Figure 20 A schematic plan view of a power semiconductor device mounted on a circuit board. Figure 22 to show Figure 20 A schematic cross-sectional view of the entire form in which the power semiconductor device is mounted on a circuit board. which is Figure 20 , Figure 21 , Figure 22 Respectively with Embodiment 1 Figure 9 , Figure 5 , Figure 7 correspond. In addition, also in the following description, the same code|symbol is attached|subjected to the same component as Embodiment 1, 2, and when the content overlaps, the description may not be repeated.

[0151] refer to Figure 20 , in the manufacturing method of the power semiconductor device of the present embodiment, basically the same as that of Embodiment 1 is performed. Figure 9 The steps shown are processed in...

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PUM

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Abstract

A power semiconductor device (1) is provided with a lead member (10), a semiconductor element (20), and a mold resin (30). The lead member (10) includes a plurality of lead terminals (11), and the plurality of lead terminals (11) extend from the inside to the outside of the mold resin (30). Each of the plurality of lead terminals (11) includes, on the outside of the mold resin (30): a root section (11A) which is disposed on the side of a region in which the semiconductor element (20) is mounted, the root section (11A) extending in a direction so as to protrude from the mold resin (30), and a distal end section (11B) which extends in a direction different from the root section (11A) and which, when viewed from the root section (11A), is disposed on the side opposite to the region in which the semiconductor element (20) is mounted. The length by which the root section (11A) extends differs between a pair of mutually adjacent lead terminals (11) among the plurality of lead terminals (11). The surface of at least the root section (11A) of each of the plurality of lead terminals (11) is covered with a coating resin (40).

Description

technical field [0001] The present invention relates to a power semiconductor device, a manufacturing method thereof, and a power conversion device, and more particularly, to a power semiconductor device having a structure in which a semiconductor element placed on a lead member is sealed with a molding resin, a manufacturing method thereof, and a power semiconductor device having the same Power conversion device. Background technique [0002] Power semiconductor devices are being used in all products from industrial equipment to home appliances and information terminals. In particular, power semiconductor devices need to be miniaturized. However, power semiconductor devices handle high voltages as well as large currents. Therefore, the insulation distance between the lead terminals, the insulation distance between the lead terminals and the external cooling member of the power semiconductor device, or the die pad portion on which the power semiconductor element is mounted...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L25/07H01L25/18
CPCH01L2224/73265H01L2924/181H01L2224/48247H01L2224/32245H01L2224/49171H01L2224/48137H01L2924/1815H01L23/49586H01L23/49548H01L23/42H01L23/367H01L23/4006H01L2224/45144H01L2224/45139H01L2224/29139H01L2224/291H01L24/32H01L24/45H01L24/29H01L24/48H01L24/49H01L24/73H01L21/565H01L23/3107H01L23/3135H01L21/56H01L2924/00012H01L2924/00014H01L2924/014H01L23/29H01L23/31H01L23/50H01L25/07H01L25/18
Inventor 岩井贵雅藤野纯司川岛裕史
Owner MITSUBISHI ELECTRIC CORP