Polishing equipment, processing method of polishing disc and processing method of silicon carbide wafer

Abstract

The invention discloses polishing equipment, a processing method of a polishing disc and a processing method of a silicon carbide wafer. The polishing equipment comprises first rotating equipment and second rotating equipment, wherein the first rotating equipment is used for mounting a grinding wheel and can drive the grinding wheel to rotate or the first rotating equipment is used for supporting a carrier disc and can drive the carrier disc to rotate; the supporting carrier disc is used for mounting the silicon carbide wafer; and the second rotating equipment is used for placing the polishing disc and can drive the polishing disc to rotate along the axis of a center of circle. By applying a technical scheme of the invention, by increasing irregular geometrical textures on the surface of the polishing disc, the surface of the silicon carbide wafer is ground uniformly when the surface of the silicon carbide wafer is mechanically ground or polished, so that a specific shallow and wide groove in a specific position is weakened, the surface quality of the silicon carbide wafer is improved and the yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, relates to a grinding device, a grinding disc processing method and a silicon carbide wafer processing method. Background technique [0002] With the continuous expansion of the scale of semiconductor equipment, the requirements for process complexity are also getting higher and higher. As a third-generation semiconductor material, silicon carbide wafers have excellent performance in heat dissipation and high temperature and high pressure resistance. However, due to the high hardness of silicon carbide, the processing technology of silicon carbide wafers is still immature until now. [0003] The processing of silicon carbide wafers generally adopts mechanical or chemical mechanical grinding, but the grinding discs used for grinding are usually processed by molding or turning. The surface of the grinding disc produced by this method will have certain regu...

AI Technical Summary

Problems solved by technology

As a third-generation semiconductor material, silicon carbide wafers have superior performance in heat dissipation, high temperature and high pressure resistance, but due to the high hardness of silicon carbide, until now, the processing technology of silicon carbide wafers is still immature

[0003] The processing of silicon carbide wafers generally adopts mechanical or chemical mechanical grinding, but the grinding discs used for grinding are usually processed by molding or turning. The surface of the grinding disc produced by this method will have certain regular geometric and mechanical texture residues, which will affect the quality of silicon carbide. Wafer surface quality reduces production yield

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