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Device and method for preparing silica fume for semiconductor

A preparation device and technology of micro-silica fume, applied in application, cocoa, grain processing and other directions, can solve problems such as low product quality, and achieve the effects of improving product quality, preventing high-temperature oxidation, and improving production efficiency

Active Publication Date: 2021-04-30
ASIA SILICON QINGHAI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One of the purposes of the present invention is to provide a preparation device for micro-silicon powder for semiconductors in view of the deficiencies in the prior art, so as to solve the problem that the existing micro-silicon powder is of low product quality due to the traditional micro-silicon powder preparation method

Method used

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  • Device and method for preparing silica fume for semiconductor
  • Device and method for preparing silica fume for semiconductor

Examples

Experimental program
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Effect test

Embodiment 1

[0056] like Figure 1~2As shown, the preparation device for micro-silicon powder for semiconductors includes a grinding chamber 1, the top of the grinding chamber 1 is connected to one end of the fixed shaft 2, the other end of the fixed shaft 2 is connected to the upper grinding disc 3 in rotation, and the upper grinding disc 3 The top of the top is provided with a first annular groove 31, the groove bottom of the first annular groove 31 is provided with a first tooth pattern, and a first gear 41 meshing with the first tooth pattern is arranged in the first annular groove 31 , the first gear 41 is in transmission connection with one end of the first rotating shaft 42, the other end of the first rotating shaft 42 is set in the slot 11 on the inner wall of the grinding cavity 1 through the first driving device 4, and the first rotating shaft 42 passes through the first rotating shaft 42. A bracket 43 supports and fixes, the first bracket 43 is arranged on the inner wall of the ...

Embodiment 2

[0072] The preparation method of micro-silicon powder for semiconductors uses the preparation device of any one of the micro-silicon powders for semiconductors in the above-mentioned embodiment 1, and includes the following steps:

[0073] Step S1, opening the silicon powder pipeline and the inert gas pipeline, the silicon powder flows into the mixing pipeline 21 through the inert gas flow, and is discharged from the discharge hole into the gap between the upper grinding disc 3 and the lower grinding disc 5;

[0074] Step S2, the silicon powder is ground by the upper grinding disc 3 and the lower grinding disc 5 to obtain the first micro-silicon powder;

[0075] Step S3, the first micro-silicon powder enters the bottom of the grinding chamber 1 driven by the inert gas flow;

[0076] Step S4, the first micro-silicon powder is sent to the filter structure 81 through the powder scraping device 7;

[0077] In step S5, part of the first microsilica is filtered through the filter s...

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Abstract

The invention relates to a device and a method for preparing micro-silicon powder for a semiconductor, belongs to the technical field of micro-silicon powder preparation, and particularly relates to the device and the method for preparing the micro-silicon powder for the semiconductor. The device comprises a grinding cavity, a fixing shaft, an upper grinding disc and a lower grinding disc, a first annular groove is formed in the top of the upper grinding disc, a first gear engaged with a first insection is arranged in the first annular groove, a discharging hole is formed in the grinding surface of the upper grinding disc, and a mixing pipeline is arranged in the fixing shaft. The discharging end of the mixing pipeline communicates with the discharging hole, the feeding end of the mixing pipeline communicates with a silicon powder pipeline and the inert gas pipeline, a powder scraping device is arranged below the lower grinding disc, and a micro-silicon powder collecting channel is arranged at the bottom of the grinding cavity. Compared with the prior art, the silicon powder is ground by introducing inert gas, so that the problem that the micro-silicon powder is likely to be oxidized in the traditional preparation method is solved, and the product quality of the micro-silicon powder is improved.

Description

technical field [0001] The invention belongs to the technical field of micro-silicon powder preparation, and in particular relates to a preparation device and method of micro-silicon powder for semiconductors. Background technique [0002] High-purity micro-silicon powder can be used in the preparation of semiconductor silicon carbide materials, the production of high-purity granular silicon, and other applications that require high-purity micro-silicon powder. With the rapid development of electronic information industry and photovoltaic industry, its market demand is increasing day by day. [0003] The existing traditional micro-silicon powder preparation methods include physical pulverization and mechanical ball milling, but the above-mentioned traditional micro-silicon powder preparation methods have the following problems: ① a large amount of heat is generated during the pulverization and grinding process, and the micro-silicon powder is easy to oxidize, Thereby reduci...

Claims

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Application Information

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IPC IPC(8): B02C7/08B02C7/11B02C23/16B02C23/24
CPCB02C7/08B02C7/11B02C23/16B02C23/24B02C2023/165
Inventor 宗冰鲍守珍张婧王生红史正斌王体虎
Owner ASIA SILICON QINGHAI
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