An unbiased photoelectrochemical hydrogen production system and application based on ingan nanopillar photoelectrodes on graphene
A hydrogen production system, photoelectrochemical technology, applied in electrodes, nanotechnology, gaseous chemical plating, etc., can solve the problems of inability to achieve broad spectrum absorption, inability to form tandem electrodes, and opaque substrates, etc. Biased photoelectric water splitting to produce hydrogen, improve photoelectric conversion efficiency, and inhibit the effect of recombination
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Embodiment 1
[0042]A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:
[0043] (1) Preparation of photoanode: using sapphire as the substrate, transfer a single-layer graphene film on the substrate by wet transfer, spin-coat PMMA solution after drying to flatten the graphene, dry at 120 degrees Celsius for 5 minutes, and then sequentially Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 980 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -8 Torr, the nitrogen flow rate was 2sccm, the plasma source power was 400W, and the growth time was 3h, and the obtained InGaN nanopilla...
Embodiment 2
[0051] A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:
[0052] (1) Preparation of photoanode: Quartz was used as the substrate, and the double-layer graphene film was transferred on the substrate by wet transfer. After drying, spin-coating PMMA solution to flatten the graphene, and drying at 120 degrees Celsius for 5 minutes followed by Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 950 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 2 × 10 -7 Torr, In beam equivalent pressure is 3.5×10 -8 Torr, the nitrogen flow rate was 2sccm, the plasma source power was 400W, and the growth time was 3h, and the proport...
Embodiment 3
[0058] A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:
[0059] (1) Preparation of photoanode: using sapphire as the substrate, transfer three layers of graphene film on the substrate by wet transfer, spin-coat PMMA solution after drying to flatten the graphene, and dry at 120 degrees Celsius for 5 minutes in turn. Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 900 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 2.5×10 - 7 Torr, In beam equivalent pressure is 5×10 -8 Torr, the nitrogen flow rate is 2sccm, the plasma source power is 400W, and the growth time is 3h, and the proportion of In atoms in the obt...
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