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Structure for improving temperature uniformity of double-sided liquid cooling radiator

A technology of radiator and radiator cover, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device parts and other directions, can solve the problems of heat generation, heat dissipation effect, poor temperature uniformity, and different heat generation.

Pending Publication Date: 2021-05-11
祥博传热科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] IGBT is a high-power semiconductor device with high power loss and serious heat generation. As the main heat source, the position of the IGBT chip in the module will also affect the heat dissipation effect of the radiator. The existing new energy vehicles use liquid cooling. The heat sink usually dissipates heat for the IGBT whose chip position is placed in the middle of the module. Most of the fin structures in the heat sink are consistent, and the heat dissipation effect and temperature uniformity are poor.
When the IGBT chip is not in the middle of the module, the heat generated on the upper and lower surfaces of the module is different, and the heat sink cannot achieve good temperature uniformity

Method used

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  • Structure for improving temperature uniformity of double-sided liquid cooling radiator
  • Structure for improving temperature uniformity of double-sided liquid cooling radiator
  • Structure for improving temperature uniformity of double-sided liquid cooling radiator

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0027] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "vertical", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, which are only for the convenience of describing the present invention and simplified description, rather t...

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Abstract

The invention relates to a structure for improving temperature uniformity of a double-sided liquid cooling radiator. According to the scheme, the structure comprises an IGBT module, an upper radiator, dense fins, a lower radiator and a water nozzle. The IGBT module is arranged between the upper radiator and the lower radiator; the dense fins are arranged on the upper side face and the lower side face or one side face of the IGBT module, and cooling liquid is introduced through the water nozzle to conduct heat exchange with the dense fins so that heat dissipation of the IGBT module can be achieved. The fin density of the dense fins is in direct proportion to the heating value of the IGBT module; when the heating value of the upper side surface of the IGBT module is high, the density of the dense fins on the upper side surface is higher than that of the fins on the lower side surface, and according to the scheme, the fins of the dense fins are in direct proportion to the heating value hook of the IGBT module, so that the heat dissipation effect of each IGBT module can be better averaged, the temperature uniformity of each IGBT module is ensured, and a better heat exchange effect is achieved.

Description

technical field [0001] The invention relates to an IGBT radiator, in particular to a structure for improving the temperature uniformity of a double-sided liquid-cooled radiator. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) insulated gate bipolar transistor module is a modular semiconductor product that is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; after packaging The advanced IGBT module is directly applied to frequency converters, UPS uninterruptible power supplies and other equipment. [0003] The IGBT module has the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation; IGBT is the core device of energy conversion and transmission. As a national strategic emerging industry, it is used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment. extremely wide. [0004] IGBT is a high-power s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/473H01L23/367
CPCH01L23/473H01L23/3672
Inventor 夏波涛曾茂进韩豪雷方杰
Owner 祥博传热科技股份有限公司