a power device
A technology of power devices and doped layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as insufficient ability to resist single event effects, reduce the risk of breakdown, reduce resistivity, and avoid hole accumulation Effect
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no. 1 example
[0023] see figure 1 , the terminal transition region of the power device 10 includes a first P-type doped layer 101, a second P-type doped layer 102, an N-type doped layer 103, an oxide layer (Oxide) 104, and a polysilicon layer (Poly-Si) 105 .
[0024] The first P-type doped layer 101 is also called the P-type substrate layer, and the other structural layers are along a predetermined direction (for example, along the figure 1 The direction from the bottom to the top in the middle) is sequentially layered on the P-type substrate layer.
[0025] The second P-type doped layer 102 is connected to the source S and is the P-body region of the power device 10 . The doping concentration of the second P-type doping layer 102 is greater than the doping concentration of the first P-type doping layer 101 . Herein, the second P-type doping layer 102 may be referred to as a P-type heavily doped layer or a P+ layer. , correspondingly, the first P-type doped layer 101 is also called a P l...
no. 2 example
[0036] see figure 2 , the terminal transition region of the power device 20 includes a first P-type doped layer 201 , a second P-type doped layer 202 and a polysilicon layer 204 .
[0037]The first P-type doped layer 201 is also called the P-type substrate layer, and other structural layers are arranged in a predetermined direction (for example, along the figure 2 The direction from the bottom to the top in the middle) is sequentially layered on the P-type substrate layer.
[0038] The second P-type doped layer 202 is connected to the source electrode S and is the P-body region of the power device 20 . The doping concentration of the second P-type doping layer 202 is greater than the doping concentration of the first P-type doping layer 201 . Herein, the second P-type doping layer 202 may be referred to as a P-type heavily doped layer.
[0039] The polysilicon layer 204 is connected to and through the gate G to ground. The oxide layer 203 is not connected to any electrode...
no. 3 example
[0044] see image 3 , the terminal transition region of the power device 30 includes a first P-type doped layer 301 , an N-type doped layer 302 , an oxide layer 303 and a polysilicon layer 304 .
[0045] The first P-type doped layer 301 is also called the P-type substrate layer, and the other structural layers are along a predetermined direction (for example, along the image 3 The direction from the bottom to the top in the middle) is sequentially layered on the P-type substrate layer. The first P-type doped layer 301 is connected to the source electrode S and is the P-body region of the power device 30 .
[0046] The polysilicon layer 304 is connected to and through the gate G to ground. The N-type doped layer 302 and the oxide layer 303 are not connected to any electrodes. The N-type doped layer 302, the oxide layer 303 and the polysilicon layer 304, the orthographic projections of the three are located in the gate bus area. like image 3 In the vertical direction show...
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