Copper target material and preparation method thereof
A technology of copper target and target material, applied in the field of sputtering materials, can solve the problems of complex preparation process of copper target material, stability of sputtering arc, influence of film deposition rate and film thickness uniformity, difficulty in meeting the requirements for use of copper target material, etc.
Active Publication Date: 2021-05-14
SONGSHAN LAKE MATERIALS LAB
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Problems solved by technology
[0003] In the prior art, high-purity copper is usually purified and prepared by regional smelting method and electrolytic refining method, and then the obtained high-purity copper is used as a copper target through multiple annealing, forging, and then cold rolling or rolling to obtain a high-purity copper plate. The preparation process of the material is complex
[0004] Moreover, the high-purity copper plate currently obtained has poor overall consistency and serious local impurities and cracks, which have a serious impact on the stability of the sputtering arc, film deposition rate and uniformity of film thickness, making it difficult to meet large specifications. Requirements for the use of copper targets in industries such as display panels and integrated circuits
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[0057] Second, see Figure 4 , the embodiment of the present application provides a method for preparing a copper target 100, comprising: stacking a plurality of grain boundary-free copper layers 110 along the thickness direction of the target, and then performing heating and rolling.
[0058] In the embodiment of the present application, the non-grain boundary copper layer 110 is directly used, and the stacked multiple non-grain boundary copper layers 110 are heated and rolled, and the operation is simple.
[0059] It can be understood that, in the embodiment of the present application, the copper material without copper grain boundaries of the grain boundary-free copper layer 110 can be purchased directly, or can be produced during the preparation process of the copper target 100 . When the copper material with copper-free grain boundary is produced in the preparation process and used directly, it is convenient to control the same batch of copper material with copper-free gr...
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Abstract
The invention provides a copper target material and a preparation method thereof, and belongs to the field of sputtering materials. The copper target material comprises a plurality of grain-boundary-free copper layers which are arranged in a stacked mode in the thickness direction of the target material, wherein the crystal lattice orientations of all the grain-boundary-free copper layers are the same and are all one of Cu(111), Cu(110), Cu(211) and Cu(100). The preparation method of the copper target material comprises the steps that the grain-boundary-free copper layers are arranged in a stacked mode in the thickness direction of the target material, and then heating and rolling are conducted. The copper target material is convenient to prepare, the overall consistency of the copper target material is good, and the problems of local impurities and serious cracks of the copper target material can be effectively solved.
Description
technical field [0001] The present application relates to the field of sputtering materials, in particular to a copper target and a preparation method thereof. Background technique [0002] High-purity metal sources are often used as sputtering materials. Compared with conventional metals, they have better performance in terms of sputtering arc stability, film deposition rate and film thickness uniformity due to less impurity content. Among them, high-purity copper, as an important sputtering material, is widely used in industries such as integrated circuits, display devices, and photovoltaic electronics. [0003] In the prior art, high-purity copper is usually purified and prepared by regional smelting method and electrolytic refining method, and then the obtained high-purity copper is used as a copper target through multiple annealing, forging, and then cold rolling or rolling to obtain a high-purity copper plate. The preparation process of the material is complex. [00...
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IPC IPC(8): C23C14/34
CPCC23C14/3407C23C14/3414
Inventor 刘科海寇金宗张志强丁志强陈益王恩哥
Owner SONGSHAN LAKE MATERIALS LAB