Multi-chip parallel IGBT module reliability comprehensive evaluation method and system

Abstract

The invention discloses a multi-chip parallel IGBT module reliability comprehensive evaluation method and system, and the method comprises the steps: building a multi-chip parallel IGBT module grid-emitter voltage reliability model, carrying out the chip fatigue fault test, and selecting the grid-emitter voltage as a fault characteristic quantity; establishing a reliability model of transconductance of the multi-chip parallel IGBT module, carrying out a bonding wire falling fault test, and selecting a module transmission characteristic curve as a fault characteristic quantity; representing the health degree of the IGBT module by using a Pearson's correlation coefficient, and respectively calculating the health degrees PPMCCC and PPMCCB under different degrees of chip fatigue and bonding wire falling fault states; and comprehensively evaluating the reliability of the multi-chip parallel IGBT module according to the PPMCCC and the PPMCCB. According to the method, chip fatigue and bonding wire falling faults in the IGBT module can be monitored at the same time, calculation is simple, the comprehensive characteristic is good, and overall reliability evaluation of the multi-chip IGBT module can be achieved.

Description

technical field [0001] The invention belongs to the technical field of reliability of key components of power electronics, and more specifically relates to a method and system for comprehensively evaluating the reliability of a multi-chip parallel IGBT module. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) module is a power electronic integrated module composed of multiple IGBT chips, diode chips, solder layers, bonding wires, ceramic copper-clad substrates, heat dissipation bottom plates and power terminals. IGBT modules are mainly used in the fields of inverters, frequency converters, uninterruptible power supplies, wind power and solar power generation. They are the core devices in power converters and one of the devices with the highest failure rate in power converters. As a key core device in high-power converters, the reliability of IGBT modules is an important issue in power electronics applications. In order to reduce the failure rate of powe...

AI Technical Summary

Problems solved by technology

At present, most of the research on the reliability of IGBT modules focuses on health-sensitive parameters, and the electrical parameters of the module are selected as the fault characteristics. However, most of them can only monitor one fault state at present, and cannot monitor chip faults and bonding wire faults at the same time.

Therefore, it is difficult to realize the accurate monitoring of the health status of the IGBT module and the comprehensive evaluation of the reliability of the IGBT module by using a single health-sensitive parameter

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