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igbt device reliability test device, system and method for mmc

A test device and reliability technology, applied in the field of IGBT device reliability test device, can solve the problem of inability to provide the stress mode of power semiconductor devices, and achieve the effect of improving the utilization rate of components and reducing the cost of the device

Active Publication Date: 2021-11-02
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing device-level reliability test schemes generally simulate the stress characteristics under PWM conditions or only use a constant DC current to simulate junction temperature fluctuations, and most of them cannot provide the stress mode of power semiconductor devices under MMC conditions.

Method used

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  • igbt device reliability test device, system and method for mmc
  • igbt device reliability test device, system and method for mmc
  • igbt device reliability test device, system and method for mmc

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Experimental program
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Embodiment

[0101] figure 1 It is the structural diagram of the IGBT device reliability test device for MMC in the embodiment of the present invention, as figure 1 As shown, a kind of IGBT device reliability test device for MMC, including:

[0102] The first test circuit, the first energy supply circuit, the second test circuit, the second energy supply circuit, the driving pulse generator, the power supply device V DC , the first power supply switch T S1 and the second supply switch T S2 .

[0103] The first test circuit specifically includes: the first device under test (DUT1, DUT2), the first inductor L, the first pre-open freewheeling circuit switch T on , the first freewheeling diode D, the first freewheeling diode switch S D , the first pre-off freewheeling circuit switch T off and the first pre-off freewheeling loop diode D off .

[0104] The collector of the first pre-open freewheeling circuit switch is connected to the cathode of the first freewheeling diode, the emitter ...

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Abstract

The invention discloses an IGBT device reliability test device, system and method for MMC. The device includes: a driving pulse generator, two test circuits, and two energy supply circuits. Each test circuit has an IGBT device. The resonance effect of the capacitor makes the on-state current of the IGBT device conform to the stress characteristics of the MMC working condition. After the IGBT completes a test cycle, the polarity of the capacitor changes. After the IGBT is turned off, it is only necessary to supplement the lost voltage to the capacitor. Quickly reach the working voltage of the IGBT device to meet the needs of the IGBT for the next test cycle. By adopting the test device, system and method of the present invention, the reliability evaluation of the IGBT device can be carried out, and the problem that the MMC cannot work normally due to the low reliability of the IGBT can be avoided.

Description

technical field [0001] The invention relates to the technical field of reliability testing of power electronics technology, in particular to an IGBT device reliability testing device, system and method for MMC. Background technique [0002] Due to the advantages of high efficiency, modularity and no need for filter capacitors, the modular multilevel converter (MMC) is the most potential converter topology in medium and high voltage high power application scenarios. As the core component in MMC, the reliability of power semiconductor devices such as IGBT determines the reliability of MMC. Therefore, when designing MMC, it is necessary to conduct reliability tests on the power semiconductor devices used in it. [0003] The existing device-level reliability test schemes generally simulate the stress characteristics under PWM conditions or only use a constant DC current to simulate junction temperature fluctuations, and most of them cannot provide the stress mode of power semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2642
Inventor 杨艺烜刘杉庞辉李学宝赵志斌崔翔
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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