Two-dimensional rapid iteration method and device for electromagnetic response of three-dimensional large-scale integrated circuit

Abstract

The invention provides a two-dimensional rapid iteration method for electromagnetic response of a three-dimensional large-scale integrated circuit. The two-dimensional rapid iteration method comprises the following steps: 1, dividing each layer of integrated circuit layout with a complex shape into polygons with simple shapes; 2, taking the influence of other layers as an additional source, and calculating the electromagnetic field and surface current distribution of each layer of the integrated circuit layout through a two-dimensional finite element method; 3, calculating the influence of the non-uniformly distributed surface current on the simple-shaped polygon on the field points through two-dimensional Gaussian integral based on a vector Green function of the influence of a point current source on the field points, and further calculating the influence of the non-uniformly distributed surface current on the complex-shaped integrated circuit layout on the electromagnetic field distribution of all other layers; and 4, judging whether the change quantity of the electromagnetic field distribution of all layers is smaller than a preset error threshold value or not, if yes, ending, and if not, turning to the step 2. The invention further provides a device of the method, and the electromagnetic response on the three-dimensional integrated circuit layout can be rapidly calculated through two-dimensional iteration.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a two-dimensional rapid iteration method and device for electromagnetic response of three-dimensional large-scale integrated circuits. Background technique [0002] With the development of communication technology, the research and development of VLSI has gradually started. In order to improve the performance of electronic equipment, reduce the size and reduce the cost, transistors, other components and circuits are integrated on a small semiconductor substrate. In order to achieve more functions, VLSI has a structure of several to hundreds of layers, and each layer has an extremely complex structure, integrating millions or even tens of millions of transistors. It has a multi-scale structure, from the centimeter level to the latest nanometer level. Such a complex structure also brings difficulties to its electromagnetic field analysis. [0003] When using the trad...

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Problems solved by technology

Since the method of moments only integrates for the interface, it will reduce a large number of grid units and unknown quantities. However, since the scale of integrated circuits ranges from nanometers to centimeters, directly solving the whole integrated circuit with the finite element method itself will cause problems. Huge sparse matrix, and due to the coupling of the finite element method and the method of moments, the formed coupling matrix is ​​a dense matrix at the interface, which greatly increases the number of non-zero elements of the entire sparse matrix and the complexity of the sparse matrix solution, making the calculation time still very long

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