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Sensor for detecting hydrogen sulfide gas at room temperature

A gas detection and sensor technology, which is applied in the field of construction engineering, can solve the problems of high power consumption and low sensor sensitivity, and achieve the effects of low power consumption, high selectivity and short response time

Pending Publication Date: 2021-05-28
佛山鑫宏腾科技发展有限公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] In order to solve the above technical problems, the present invention proposes a hydrogen sulfide gas detection sensor at room temperature. The sensor has high sensitivity, strong selectivity, short response time and low power consumption, and can work at low temperature and detect The characteristics of low-concentration gas solve the problems of low sensitivity and high power consumption of existing hydrogen sulfide sensors

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  • Sensor for detecting hydrogen sulfide gas at room temperature
  • Sensor for detecting hydrogen sulfide gas at room temperature
  • Sensor for detecting hydrogen sulfide gas at room temperature

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Embodiment Construction

[0028]Next, the technical solutions in the embodiments of the present invention will be apparent from the embodiment of the present invention, and it is clearly described, and it is understood that the described embodiments are merely embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, there are all other embodiments obtained without making creative labor without making creative labor premises.

[0029]In order to prepare a gas-sensitive element, a Ti (5 nm) / au (50 nm) film is deposited on the surface of the glass substrate using a radio frequency magnetron sputtering method. Then, the metal film is patterned to form a fork finger electrode (Ide) having 22 fingers and 100 mm gaps.figure 2 A schematic diagram of the manufacturing process step of forming a fork finger is given. Then, the undoped ZnO film is grown through the surface of the entire surface as a seed layer by hydrothermal synthesis. The hydrothermal reaction...

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Abstract

The invention relates to the field of constructional engineering, and discloses a sensor for detecting hydrogen sulfide gas at room temperature. The sensor comprises a reduced graphene oxide nanosheet 1, a copper-doped zinc oxide nanorod 2, an Au (50nm) / Ti (5nm) coating 3 and a glass substrate 4. When the surface of the sensor is exposed to H2S gas, H2S molecules are adsorbed on the surface of the nano composite sensor, and free electrons are released through interaction between pre-adsorbed oxygen and H2S. The free electrons neutralize holes in reduced graphene oxide (RGO) to reduce the size of a charge conduction channel, so that the width of a space charge region is increased, and the resistance of the sensor is increased. Therefore, the concentration of H2S gas is reflected. The hydrogen sulfide gas sensor has the advantages of high sensitivity, high hydrogen selectivity, stable performance and short response time.

Description

Technical field[0001]The present invention relates to the field of construction engineering, and more particularly to a hydrogen sulfide gas detection sensor at room temperature.Background technique[0002]Hydrogen sulfide is a toxic, colorless, aromatic gas, excess inhalation can lead to neurological toxicity, respiratory failure, can also cause death. Therefore, developing high performance, high reliability, good selectivity, can both work at low temperatures and Hypostth2The S gas sensor has a heavy meaning.[0003]In order to achieve these goals, the gas sensor based on the metal oxide semiconductor has been widely studied, and it still needs to be2S gas sensing progressive improvements. In various semiconductor materials in practical applications, zinc oxide has the advantages of low cost, non-toxic, unique electrochemical properties, nano size, variety of topography, and simple integration, showing it in h2The application potential in the field of gas sensitive. Further, in the Zn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 谭贺洵贺春扬申国辉
Owner 佛山鑫宏腾科技发展有限公司
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