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Low-voltage SCR device for ESD protection

A technology of ESD protection and devices, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of inability to achieve low power consumption, sudden increase of leakage current, etc., to avoid PNPN collusion phenomenon, low leakage current, and DC blocking The effect of empowerment

Active Publication Date: 2021-05-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the inventors of the present invention found in the follow-up scientific research work that there is a potential PNPN collusion phenomenon in the low-power bidirectional SCR device structure of this structure, which leads to the leakage current of the low-power bidirectional SCR device structure when the working voltage is 1.5V The sharp increase makes the device unable to achieve low power consumption when the operating voltage is above 1.5V, such as Figure 9 shown

Method used

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  • Low-voltage SCR device for ESD protection
  • Low-voltage SCR device for ESD protection
  • Low-voltage SCR device for ESD protection

Examples

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Embodiment 1

[0024] This embodiment provides a low-voltage unidirectional SCR device 300 for ESD protection, and its top view schematic diagram is as follows Figure 4 As shown, the schematic cross-section along the line A-A' is shown in Figure 7 As shown; the low-voltage unidirectional SCR device has an anode and a cathode, the anode is electrically connected to PAD1, and the cathode is electrically connected to PAD2; it will specifically include:

[0025] The P-type substrate 210, the N-type deep buried layer 220 formed on the P-type substrate 210, the first N-type deep well region, the first P-type deep well region, and the first P-type deep well region formed on the deep buried layer 220 adjacent to each other from left to right. Well region 260, second N-type deep well region 240, second P-type deep well region 250, third N-type deep well region;

[0026]A first P-type heavily doped active region 241 and a first N-type heavily doped active region 242 are sequentially arranged in the...

Embodiment 2

[0028] This embodiment provides a low-voltage bidirectional SCR device 200 for ESD protection, and its top view schematic diagram is as follows Figure 5 As shown, the schematic cross-section along the line A-A' is shown in Figure 7 As shown, the schematic cross-section along the line B-B' is shown in Figure 8 As shown, it specifically includes: a first SCR device and a second SCR device arranged in the longitudinal direction, wherein the first SCR device and the second SCR device have the same structure as the unidirectional SCR device 300 in Embodiment 1, except that they are arranged in the lateral direction The placement direction of the first SCR device and the second SCR device are opposite; more specifically, in this embodiment, the placement direction of the first SCR device is the same as that of the unidirectional SCR device 300 in Embodiment 1, and its anode and PAD1 Electrical connection, the cathode is electrically connected to PAD2, the second SCR device is pl...

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Abstract

The invention belongs to the technical field of electrostatic protection, and provides a low-voltage one-way / two-way SCR device for ESD protection. Compared with a traditional electrostatic protection device, the novel structural design is adopted, so that an auxiliary trigger access (forward / reverse) of the device comprises three N + / P-WELL diodes, the direct current blocking capacity of the device is enhanced, and therefore lower leakage current, lower static power consumption and more stable parasitic capacitance value are obtained compared with the traditional electrostatic protection device; a better electrostatic protection effect is obtained; compared with an existing low-power-consumption bidirectional SCR device for ESD protection, the low-power-consumption bidirectional SCR device has the advantages that the potential PNPN series connection phenomenon in the device structure can be avoided by adopting the novel structural design, so that the leakage current abrupt increase phenomenon cannot occur when the working voltage of the low-voltage bidirectional SCR device is 1.5 V; in other words, the device can still achieve effective and low-power-consumption ESD protection at the working voltage of 1.5 V or above and 1.8 V or below.

Description

technical field [0001] The invention belongs to the technical field of electrostatic protection, and in particular relates to a low-voltage unidirectional and bidirectional SCR device for ESD protection. Background technique [0002] With the continuous development of integrated circuit technology, chip damage caused by Electro-Static Discharge (ESD) events has become more and more serious, which seriously restricts the reliability of semiconductor products; therefore, providing effective on-chip (on chip) ) ESD protection design is very necessary; and, generally speaking, the more advanced the manufacturing process, the greater the difficulty of ESD protection engineering. [0003] Among many optional ESD protection devices, SCR (Silicon-Controlled-Rectifier, silicon-controlled rectifier) ​​has very high area efficiency and is widely used. In the low-voltage field, the direct-connected SCR (DCSCR, directly-connected SCR) is widely used. Its traditional two-way structure is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 刘志伟卿乙宏张钰鑫李洁翎杜飞波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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