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A Reactor Monocrystalline Silicon Irradiation Control System

A control system, single crystal silicon technology, applied in the direction of reactor, nuclear reactor monitoring, greenhouse gas reduction, etc., can solve the radial neutron fluence rate of the core, cannot grasp the irradiation information in real time, and is difficult to ensure the calculation of neutron fluence Accuracy, illumination uniformity and other issues, to achieve the effect of high measurement accuracy, improved calculation accuracy, and improved human factors engineering characteristics

Active Publication Date: 2022-04-29
NUCLEAR POWER INSTITUTE OF CHINA
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Problems solved by technology

[0003] The above-mentioned existing method can only obtain the measured value of the thermal neutron fluence after the irradiation of a tank of silicon body, and then calculate the irradiation time according to the estimated thermal neutron fluence, and cannot grasp the radiation information in real time
Moreover, due to the fact that the thermal neutron fluence rate changes continuously with changes in the core loading scheme, deepening of fuel burnup, and changes in the position of the control rods during the irradiation period, the radial and axial distribution of the neutron fluence rate in the core is not uniform. , it is difficult to predict the thermal neutron fluence rate during the irradiation of other silicon bodies through the measured value of thermal neutron fluence rate of a tank of silicon body

Method used

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  • A Reactor Monocrystalline Silicon Irradiation Control System
  • A Reactor Monocrystalline Silicon Irradiation Control System
  • A Reactor Monocrystalline Silicon Irradiation Control System

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Effect test

Embodiment 1

[0087] like figure 1 , figure 2 , image 3 , Figure 4 Shown:

[0088] A single crystal silicon irradiation control system for a reactor, including an irradiation device, a sensing device, and a control device;

[0089] The irradiation device includes: vertically arranged reactor core irradiation tunnels and single crystal silicon to be irradiated;

[0090] see figure 2 , the sensing device includes: corresponding i neutron detectors are arranged at i heights along the reactor core irradiation tunnel; i is greater than or equal to 2;

[0091] The i heights include: the first height, the second height, ..., the Nth height, the N+1th height, ..., the i-th height, the first The instantaneous neutron fluence rate corresponding to the height, the second height, ..., the Nth height, the N+1th height, ..., the i-th height becomes smaller in turn;

[0092] The control device includes: main control computer, single crystal silicon position control device;

[0093] Master com...

Embodiment 2

[0106] like figure 1 , figure 2 , image 3 , Figure 4 Shown:

[0107] Preferably, in order to improve the radiation production efficiency, the instantaneous neutron fluence rate at the bottom of the tunnel is generally the largest. Therefore, the initial height corresponds to the first height, that is, after the initial height displacement command is issued, the radiation of single crystal silicon from the reactor core is controlled. The pre-irradiation height outside the irradiation tunnel is moved to the first height in the reactor core irradiation tunnel, and the first height corresponds to the preset bottommost area of ​​the tunnel. Generally, the lifting threshold is set to be 80% of the total neutron flux threshold required for single crystal silicon irradiation, and the subsequent lifting threshold is set to 90% of the total neutron flux threshold value required for single crystal silicon irradiation. The whole control process is as follows: the total neutron flu...

Embodiment 3

[0109] like figure 1 , figure 2 , image 3 , Figure 4 Shown:

[0110]Preferably, if the initial placement of monocrystalline silicon to the first height is directly used for irradiation, the technical effect can improve production efficiency and shorten the entire irradiation time; but because the instantaneous neutron fluence rate at the first height is relatively low Large, so the uniformity of the neutron amount in this section will fluctuate greatly, resulting in non-uniform radiation transmutation doping. Therefore, in order to obtain high-quality and uniform radiation transmutation doping products; it is necessary to look for neutrons The optimal section of uniform distribution of fluence, and irradiating on the basis of the initial irradiation, the uniformity of the obtained product in the irradiation transmutation doping will be greatly improved. In order to achieve the above object, the present invention proposes the following two preferred methods.

[0111] T...

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Abstract

The invention discloses a reactor monocrystalline silicon irradiation control system, which comprises: reactor core irradiation tunnels arranged vertically and monocrystalline silicon to be irradiated; i neutron detectors; control computer, single crystal silicon position control device; main control computer: when the single crystal silicon is at the Nth height, use the "instantaneous neutron injection of the Nth neutron detector at the Nth height Quantity rate ZLL N "Integrate to get" the total radiation integrated flux ZTL when the single crystal silicon is at the Nth height j，N "; according to "the integrated total flux ZTL of the single crystal silicon at the Nth height j，N ",...,"The integrated total flux ZTL of the single crystal silicon at the first height j，1 "Sum and get" the total neutron flux Z of single crystal silicon has been irradiated N "; If "single crystal silicon has been irradiated total neutron flux Z N "When the "Nth threshold" is reached, output the "Nth lift displacement command" that moves from the Nth height to the N+1th height.

Description

technical field [0001] The invention relates to the field of neutron radiation transmutation doping quality control, in particular to a reactor monocrystalline silicon radiation control system. Background technique [0002] The neutron transmutation doping of single crystal silicon is based on the target nuclei 30 Si absorbs neutrons and forms 31 In order to ensure that the doping concentration of the silicon body after irradiation reaches the target value accurately, the irradiated thermal neutron fluence of the silicon body must be precisely controlled. The existing methods for monitoring neutron fluence of irradiation of single crystal silicon are mainly to estimate the thermal neutron fluence of silicon irradiation through off-line measurement technology (data silicon inversion method or activated foil measurement method). [0003] The above-mentioned existing methods can only obtain the measured value of the thermal neutron fluence after the irradiation of a tank of s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21C17/10G21C17/108
CPCG21C17/10G21C17/108Y02E30/30
Inventor 蒋波王云波江易蔚刘荣李加刚李子彦陈梦雪武文超杜双李自强李普唐锡定罗欣李林洪徐兵
Owner NUCLEAR POWER INSTITUTE OF CHINA
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