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Phase grating structure with enhanced diffraction efficiency of ninth diffraction order

A technology of phase grating and diffraction efficiency, which is applied in the direction of diffraction grating, using optical device to transmit sensing components, optics, etc., can solve the problems of measurement failure, low diffraction efficiency, influence, etc., and achieve the effect of improving measurement accuracy

Active Publication Date: 2021-06-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

At present, people usually take the 5th diffraction order as the target measurement signal, and use AH53 to improve the diffraction efficiency of this diffraction order. However, AH53 not only enhances the 5th diffraction order, but also has strong zero-order and other even diffractions. order, and the diffraction efficiency of the 9th diffraction order is too low, which is easily affected by the process, resulting in measurement failure

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  • Phase grating structure with enhanced diffraction efficiency of ninth diffraction order
  • Phase grating structure with enhanced diffraction efficiency of ninth diffraction order
  • Phase grating structure with enhanced diffraction efficiency of ninth diffraction order

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] The structural parameters of the phase grating mainly include: the width of the ridge, the number of the ridge, the depth of the groove, the position of the ridge, etc. The determination of the structural parameters of the 9th diffraction order phase grating and the design effect are introduced in detail below.

[0037] Determine Ridge Width and Number

[0038] First, in order to enhance the diffraction efficiency of the 9th diffraction order, the width of the grating ridge needs to be (2n-1)d / 18, where n is a positive integer less than 9, and d is the period of the grating, thus enhancing the efficiency of the 9th diffraction order Ridge widths are: d / 18, 3d / 18, 5d / 18, 7d / 18, 9d / 18, 11d / 18, 13d / 18, 15d / 18 and 17d / ...

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Abstract

The invention provides five phase grating structure with enhanced diffraction efficiency of ninth diffraction order, wherein the structures have relatively high ninth-level diffraction efficiency, and meanwhile, all even diffraction levels of diffraction efficiency are lack of levels, so that the problems of relatively high zero level and other even diffraction levels and low diffraction efficiency of the ninth diffraction level in AH53 which is mainly adopted at present are well solved, and therefore, the phase grating structure can improve the measurement precision of the system.

Description

technical field [0001] The invention relates to the technical fields of semiconductors, integrated circuits, and precision measurement, in particular to a phase grating structure with enhanced diffraction efficiency of the ninth diffraction order. Background technique [0002] In the field of semiconductor, integrated circuit and precision measurement, phase grating position sensor is often used to measure the position information of the target. As a measurement mark, the phase grating acts on the incident light to generate a diffracted beam. By extracting the position information carried in the diffracted light, the center position of the grating is obtained. With the continuous improvement of measurement accuracy requirements, especially in the field of integrated circuits, the measurement accuracy needs to reach the nanometer or even sub-nanometer level, so it is necessary to further improve the measurement accuracy of the phase grating position sensor. [0003] The meas...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/38G02B5/18G02B27/00
CPCG01D5/38G02B27/0012G02B5/18
Inventor 杨光华李璟丁敏侠卢增雄齐月静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI