Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bare chip crack damage detection circuit, crack detection method and memory

A damage detection and crack detection technology, applied in the direction of circuit, electric solid device, semiconductor/solid device test/measurement, etc.

Active Publication Date: 2021-06-04
CHANGXIN MEMORY TECH INC
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a chip crack damage detection circuit, a crack detection method, and a memory, so as to solve the technical problem of quickly identifying the chip damaged by cracks during the detection and selection of the bare chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bare chip crack damage detection circuit, crack detection method and memory
  • Bare chip crack damage detection circuit, crack detection method and memory
  • Bare chip crack damage detection circuit, crack detection method and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0084] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative work, including but not limited to combinations of multiple embodiments, all fall within the protection scope of this application.

[0085] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and not necessarily Used to describe a specific sequence or sequence. It is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a bare chip crack damage detection circuit, a crack detection method and a memory. The bare chip crack damage detection circuit comprises a test circuit, a crack detection loop and a relay driving unit. The test circuit is positioned in a protection ring of a bare chip and is used for outputting a pulse detection signal; the crack detection loop is located in the protection ring and / or outside the protection ring, the input end of the crack detection loop is connected with the output end of the test circuit, and the output end of the crack detection loop is connected with the output pin of the bare chip; the relay driving unit is arranged between the input end and the output end of the crack detection loop and is used for enhancing the transmission capability of the pulse detection signal; the protection ring surrounds the whole bare chip and is used for protecting the bare chip; when the test circuit enters a test mode, a pulse detection signal is output to the crack detection loop, and a test machine judges whether the bare chip is damaged by cracks or not by reading a signal on an output pin of the bare chip. And the crack detection speed and sensitivity are greatly improved through the relay driving unit.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular to a chip crack damage detection circuit, a crack detection method and a memory. Background technique [0002] A semiconductor integrated chip is to manufacture dozens or even hundreds of integrated circuit units on a circular silicon wafer at the same time, then cut the silicon wafer, cut the integrated circuit units to form bare chips, and then test, select, and package them. , becomes the chip we see. [0003] At present, there are two ways of cutting silicon wafers: blade sawing and laser cutting. However, no matter which method is used for cutting, cracks will inevitably occur on the silicon wafer. When the cracks spread to the die, it may damage the internal integrated circuit and cause the die to be scrapped. [0004] Therefore, it is necessary to add a crack detection circuit on the die to quickly identify the die damaged by the crack. Contents of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/34H01L22/12H01L22/14
Inventor 曹玲玲
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products