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Dual dielectric layer for closing seam in air gap structure

A technology of dielectric layer and air gap structure, applied in the direction of circuits, electrical components, semiconductor/solid-state device components, etc., can solve the problems of layer foaming, reducing air gap width, limiting performance improvement, etc.

Pending Publication Date: 2021-06-11
格芯美国公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The seam can be damaged by moisture, for example from subsequent wet etching, which enters the air gap and bubbles the layer above the seam, causing defects
One way to solve this problem is to use spacers to reduce the gap, but this reduces the width of the air gap, thereby limiting any performance improvement
Another approach is to use a thicker dielectric layer to seal the opening and taller contacts, but this process spaces out the wiring layers above the air gap and may require different sized contacts on the chip

Method used

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  • Dual dielectric layer for closing seam in air gap structure
  • Dual dielectric layer for closing seam in air gap structure
  • Dual dielectric layer for closing seam in air gap structure

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Embodiment Construction

[0019] The present disclosure relates to a structure including an air gap structure and a wiring layer. The air gap structure may include: an opening in the first dielectric layer between adjacent conductors; and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows the open end of the air gap, but may not seal the opening. In other cases, the non-conformable layer may seal the ends of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on a non-conformal dielectric layer. The conformal layer seals the ends of the opening, or seals the seam if present. A method of forming a structure is also provided. The air gap reduces the capacitance between the transistor gate and adjacent wires, contacts and vias, such as those used to contact the source and drain of the transistor. The double dielectric layer can close the open end of the air gap and can additionally seal th...

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Abstract

The invention relates to a dual dielectric layer for closing a seam in an air gap structure. A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.

Description

technical field [0001] The present disclosure relates to integrated circuit (IC) fabrication, and more particularly to structures including air gap structures and wiring layers, and related methods. The structures and methods use a dual dielectric layer including a conformal dielectric layer over a non-conformal dielectric layer over an opening to seal any seams in the non-conformal dielectric layer. ). Background technique [0002] Air gap structures are provided in many IC systems to improve performance. For example, radio frequency (RF) switches are widely used in telecommunications devices, such as smartphones, to route high frequency telecommunications signals through transmission paths. For example, RF switches are commonly used in smartphones to allow use with different digital wireless technology standards used in various geographic locations. Current FR switches are typically fabricated using semiconductor-on-insulator (SOI) substrates. SOI substrates typically ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76829H01L21/76835H01L21/7682H01L23/53295H01L21/76826H01L29/78H01L29/0649H01L23/528H01L23/5222
Inventor 文森·J·麦加赫克雷格·R·格鲁塞基安珠缙蒂姆·H·李托德·J·范克莱克
Owner 格芯美国公司