Vertical cavity surface emitting laser based on liquid crystal regulation, and preparation method thereof

A vertical cavity surface emission, laser technology, applied in lasers, laser parts, semiconductor lasers and other directions, can solve the problems of unadjustable, complex epitaxial growth, structural etching and high precision requirements

Active Publication Date: 2021-06-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

Although a variety of methods have been proposed for the realization of single-mode VCSELs, such as the design of anti-resonance reflective optical waveguides (ARROWs), porous structure design, photonic crystal structure, etched surface relief, etc., the disadvantage of these designs is the need for complex epitaxy. Growth and structure etching require extremely high precision, and the output mode is fixed after fabrication and cannot be adjusted, so further optimization and improvement are still needed in practical applications

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  • Vertical cavity surface emitting laser based on liquid crystal regulation, and preparation method thereof
  • Vertical cavity surface emitting laser based on liquid crystal regulation, and preparation method thereof
  • Vertical cavity surface emitting laser based on liquid crystal regulation, and preparation method thereof

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Embodiment Construction

[0046] In order to solve technical problems such as the flexible control of the VCSEL transverse lasing mode in the prior art, the present invention provides a liquid crystal-based mode-tunable vertical cavity surface emitting laser and its preparation method, which can be used according to the working state and needs of the laser. The output mode is dynamically regulated without being highly dependent on the precision of the surface anti-phase structure, and has a certain adjustable range, which can overcome the related shortcomings and deficiencies of the existing vertical cavity surface emitting lasers.

[0047]The invention is a vertical cavity surface emitting laser based on liquid crystal control. Specifically, the structure of the laser described in the present invention can be divided into two parts, one part is a traditional oxidation-limited vertical cavity surface emitting laser structure, and the other part is a liquid crystal mode modulation structure. Among them,...

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Abstract

The invention provides a vertical cavity surface emitting laser based on liquid crystal regulation. The vertical cavity surface emitting laser comprises a traditional oxidation limiting type vertical cavity surface emitting laser structure and a liquid crystal mode modulation structure, and the traditional oxidation limiting type vertical cavity surface emitting laser structure is used for emitting an excitation mode; and the liquid crystal mode modulation structure is positioned on the traditional oxidation limiting type vertical cavity surface emitting laser structure, and the influence on transmission light field loss is realized through the change of the liquid crystal refractive index, so that the lasing mode is controlled. The invention also provides a preparation method for preparing the vertical cavity surface emitting laser based on liquid crystal regulation.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser devices, in particular to a liquid crystal-based vertical cavity surface emitting laser and a preparation method thereof, which realize high-order mode suppression. Background technique [0002] The development of vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) generally began with the concept first proposed in 1977 when the Iga research group designed an InP-based p-n junction surface emitting laser. During the development of more than 40 years, the structural framework of VCSEL has been gradually improved, including the distributed Bragg reflection (DBR) structure that forms a high-reflection resonant cavity, and the oxide aperture structure that realizes current and light field mode confinement. , but also has diversity, such as high contrast grating (High ContrastGrating, HCG) structure and proton injection aperture structure. On the other ha...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/065H01S5/183H01S5/343
CPCH01S5/0651H01S5/18302H01S5/34313
Inventor 邵泓焰曾一平张杨崔利杰崔宁
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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