Biasing circuit, device and equipment of power amplifier
A power amplifier and bias circuit technology, applied in the electronic field, can solve the problems of M0 tube linearity deterioration, bias voltage reduction, etc.
Active Publication Date: 2021-06-18
GUANGZHOU HUIZHI MICROELECTRONICS
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Problems solved by technology
Based on the above bias circuit, since the M tube is connected by a diode, and the diode is a nonlinear component, the nonlinear effect causes the gate-source voltage of the M tube to decrease as the power of the input RF signal increases, that is, the bias provided to the M0 tube The voltage decreases, which leads to the deterioration of the linearity of the M0 tube
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[0030] In order to understand the characteristics and technical contents of the embodiments of the present application in more detail, the implementation of the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. The attached drawings are only for reference and description, and are not intended to limit the embodiments of the present application.
[0031] In order to understand the characteristics and technical contents of the embodiments of the present application in more detail, the implementation of the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. The attached drawings are only for reference and description, and are not intended to limit the embodiments of the present application.
[0032] An embodiment of the present application provides a bias circuit for a power amplifier, figure 2 It is a schematic diagram of the first component ...
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The invention discloses a biasing circuit, a biasing device and biasing equipment of a power amplifier. The biasing circuit comprises a first part circuit, a second part circuit and a power supply, the power supply is connected with the first part circuit power end; after parallel connection, one end is connected with a grid electrode of a first transistor of the power amplifier; the first part circuit and the second part circuit respectively provide a first bias voltage and a second bias voltage for the grid electrode of the first transistor, and after superposition, a stable bias voltage is provided; the bias circuit impedance is located in a preset impedance range. Thus, the first part circuit is used for providing the first bias voltage for the power amplifier; the second part circuit is used for providing the second bias voltage for the power amplifier; the second bias voltage can adjust the first bias voltage and provide the stable bias voltage for the power amplifier and the impedance of the bias circuit is located in the preset impedance range; the linearity performance of the power amplifier is ensured, and the memory effect of the power amplifier is reduced.
Description
technical field [0001] The present application relates to electronic technology, in particular to a bias circuit, device and equipment of a power amplifier. Background technique [0002] The bias circuit of the RF amplifier is used to provide a stable DC bias for the power tube. For the MOS transistor amplifier, it mainly provides the DC bias voltage for the gate of the MOS transistor. [0003] figure 1 It is a schematic diagram of the composition and structure of the bias circuit of the existing power amplifier. Such as figure 1 As shown, the bias circuit includes: the M tube and the current source IBIAS; the specific connection method: the drain of the M tube is connected to the current source IBIAS, the source of the M tube is grounded, and the drain of the M tube is shorted to the gate; the M tube The grid of the power amplifier is connected to the grid of the M0 tube for providing a bias voltage for the grid of the M0 tube; the M0 tube is included in the signal ampli...
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IPC IPC(8): H03F3/20H03F1/30
CPCH03F3/20H03F1/30H03F3/193H03F3/245H03F2200/18H03F2200/451H03F1/565H03F1/301H03F1/56
Inventor 彭振飞苏强倪旭文
Owner GUANGZHOU HUIZHI MICROELECTRONICS