Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device having improved electrostatic discharge protection

A technology for semiconductors and devices, applied in the field of semiconductor devices with improved electrostatic discharge protection and their formation, can solve the problems of poor operation performance and inoperability of integrated chips, etc.

Pending Publication Date: 2021-06-22
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a semiconductor device is damaged by an ESD pulse, the integrated chip may operate less than expected, or may even fail to operate at all

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device having improved electrostatic discharge protection
  • Semiconductor device having improved electrostatic discharge protection
  • Semiconductor device having improved electrostatic discharge protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present disclosure will now be described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout, and the structures shown therein are not necessarily drawn to scale. It should be understood that this detailed description and corresponding drawings do not in any way limit the scope of the disclosure and that they provide merely a few examples illustrating some of the ways in which the inventive concept may be made apparent.

[0023] The present disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the description below that a first feature is formed "on" a second feature or "on" a second feature may include embodiments in which the first and second features are for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to View More

Abstract

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions. The invention further provides a forming method of the semiconductor device.

Description

technical field [0001] Embodiments of the present invention are directed to a semiconductor device with improved electrostatic discharge protection and a method of forming the same. Background technique [0002] Today's integrated chips (ICs) include millions or billions of semiconductor devices on a semiconductor substrate (eg, silicon). Electrostatic discharge (ESD) is the sudden release of electrostatic charge, which may result in high electric fields and high currents within integrated chips. An ESD pulse can damage a semiconductor device, for example by "blowing out" the gate dielectric of a transistor or "melting" the active region of the device. If a semiconductor device is damaged by an ESD pulse, the integrated chip may operate less than expected, or may even fail to operate at all. Contents of the invention [0003] An embodiment of the present invention provides a semiconductor device including a source region located in a substrate. A drain region is located...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/08H01L29/78H01L27/02H01L21/336
CPCH01L27/0296H01L29/0847H01L29/78H01L29/66477H01L21/28052H01L21/76224H01L27/0288H01L29/0653H01L29/0692H01L29/665H01L29/66659H01L29/7835H01L23/485H01L21/28097H01L21/28518H01L27/0251H01L29/0649H01L29/4933
Inventor 许胜福蔡执中朱振梁龚达渊
Owner TAIWAN SEMICON MFG CO LTD