A high-order temperature-compensated MOS bandgap reference circuit with low temperature drift
A high-order temperature compensation and reference circuit technology, applied in the field of microelectronics, can solve problems such as application limitations
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Embodiment 1
[0038] A high-order temperature-compensated MOS bandgap reference circuit with low temperature drift, such as Figure 2 ~ Figure 4 As shown, the following setting method is adopted in particular: including a first-order MOS bandgap reference circuit, a high-temperature region compensation circuit, a low-temperature region compensation circuit and a start-up circuit, the signal output terminals of the first-order MOS bandgap reference circuit are respectively electrically connected to the high-temperature region The signal input end of the compensation circuit, the signal input end of the low temperature area compensation circuit and the signal input end of the start-up circuit, the signal output end of the start-up circuit is electrically connected to the start-up signal input end of the first-order MOS bandgap reference circuit, and the first-order The MOS bandgap reference circuit generates a bandgap reference voltage with a low temperature coefficient, and the high temperatu...
Embodiment 2
[0040] This embodiment is further optimized on the basis of the foregoing embodiments, and the same parts as the foregoing technical solutions will not be repeated here, such as Figure 2 ~ Figure 4 As shown, further in order to better realize the present invention, the following arrangement is adopted in particular: the first-order MOS bandgap reference circuit uses the gate-source voltage of the NMOS transistor operating in the sub-threshold region to generate a voltage with a negative temperature coefficient The voltage V CTAT , the difference between the gate-source voltages of two NMOS transistors operating in the subthreshold region produces a voltage V with a positive temperature coefficient PTAT , voltage V CTAT and voltage V PTAT Weighted to obtain a first-order bandgap reference voltage.
Embodiment 3
[0042] This embodiment is further optimized on the basis of any of the above-mentioned embodiments, and the same parts as the aforementioned technical solutions will not be repeated here, such as Figure 2 ~ Figure 4 As shown, further in order to better realize the present invention, the following setting method is adopted in particular: the first-order MOS bandgap reference circuit includes PMOS transistor M1, PMOS transistor M2, PMOS transistor M5, PMOS transistor M8, PMOS transistor M9, PMOS tube M10, NMOS tube M3, NMOS tube M4, NMOS tube M6, NMOS tube M7, resistor R1, resistor R2, resistor R3, resistor R4, error amplifier A1, the source of PMOS tube M1 and the source of PMOS tube M2 respectively , the source of the PMOS transistor M5, the source of the PMOS transistor M8, the source of the PMOS transistor M9, the source of the PMOS transistor M10 and the external power supply VDD, and the drain of the PMOS transistor M1 is respectively connected to the positive input end of...
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