Unlock instant, AI-driven research and patent intelligence for your innovation.

Microwave plasma generating device and plasma etching equipment

A microwave plasma and plasma etching technology, which is applied in the direction of plasma, discharge tube, electrical components, etc., can solve the problems of unstable etching quality, uneven plasma, poor heat dissipation of the device, etc., achieve stable and uniform etching, and ensure The effect of etching quality and prolonging service life

Pending Publication Date: 2021-06-25
珠海恒格微电子装备有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, most of the traditional plasma generators used for etching circuit boards have the problems of uneven plasma generation, poor heat dissipation of the device, resulting in unstable etching quality and low service life.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave plasma generating device and plasma etching equipment
  • Microwave plasma generating device and plasma etching equipment
  • Microwave plasma generating device and plasma etching equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] see Figure 1 to Figure 4 A microwave plasma generating device is shown, the microwave plasma generating device includes a plasma chamber 303 and a microwave introduction chamber 304, wherein the microwave introduction chamber 304 is arranged on the upper end of the plasma chamber 303, and between the microwave introduction chamber 304 and the plasma chamber 303 The plasma chamber 303 is connected with a first cooling assembly 305 and a gas inlet assembly, the first cooling assembly 305 is an annular cold runner formed on the cooling plate 301, and the annular cold runner communicates with t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of circuit board processing equipment, in particular to a microwave plasma generating device and plasma etching equipment. According to the microwave plasma generating device, a microwave leading-in cavity is formed in the upper end of a plasma cavity, the microwave leading-in cavity and the plasma cavity are separated through a quartz plate, the plasma cavity is connected with a first cooling assembly, and the first cooling assembly is an annular cold runner formed in a cooling plate, so that the heat dissipation effect of the whole plasma generating device is ensured, the service life of the device is prolonged, the device can still uniformly generate plasmas after being used for a long time, and the etching quality and efficiency are ensured; and the plasma etching equipment adopts the microwave plasma generating device, so that the circuit board can be etched stably and uniformly, the etching quality of the circuit board is ensured, and the service life of the whole equipment is prolonged.

Description

technical field [0001] The invention relates to the technical field of circuit board processing equipment, in particular to a microwave plasma generating device and plasma etching equipment. Background technique [0002] Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electron area forms a plasma, and the resulting ionized gas and the gas composed of released high-energy electrons form plasma or ions. When gas atoms are accelerated by an electric field, they release enough force and surface repelling forces to tightly bond materials or etch surfaces. Plasma processing equipment using this principle uses free radicals in the plasma to bombard or sputter surface molecules of the material to be etched to form volatile substances, thereby achieving the purpose of etching. [0003] At present, plasma treatment equipment is widely used in plasma cleaning, etching, plasma plating, plasma coating, plasma ashing and surface activat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05H1/46H01J37/32H05K3/00H05K3/06
CPCH01J37/32192H05K3/0041H05K3/068H01J2237/334H05H1/461H05K7/20145Y02P70/50
Inventor 赵义党李志强李志华廖文晗贝亮
Owner 珠海恒格微电子装备有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com