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Tunneling magnetoresistance effect magneto-dependent sensor based on superparamagnetic film

A tunneling magnetoresistance and magnetosensitive sensor technology, applied in the field of spintronics, can solve the problems of increasing process difficulty and manufacturing cost, and difficult device miniaturization

Pending Publication Date: 2021-07-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two methods greatly increase the process difficulty and manufacturing cost, and it is difficult to miniaturize the device

Method used

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  • Tunneling magnetoresistance effect magneto-dependent sensor based on superparamagnetic film
  • Tunneling magnetoresistance effect magneto-dependent sensor based on superparamagnetic film
  • Tunneling magnetoresistance effect magneto-dependent sensor based on superparamagnetic film

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] figure 1 It is a schematic structural diagram of a tunneling magnetoresistance effect magnetosensitive sensor shown in an embodiment of the present invention. Such as figure 1 As shown, the present invention provides a kind of tunneling magnetoresistance effect magnetosensitive sensor based on superparamagnetic thin film, and this tunnel magnetoresistance effect magnetosensitive sensor comprises: substrate 1; Smooth layer 2, is arranged on substrate 1; The magnetic layer 3 is arranged on the smooth layer 2, wherein the detecting magnetic layer 3 is a thin film with superparamagnetism; the barrier layer 4 is arranged on the detecting magnetic layer 3; the reference magnetic layer 5 is arranged on the barrier layer ...

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Abstract

The invention discloses a tunneling magnetoresistance effect magneto-dependent sensor based on a superparamagnetic film and a preparation method of the tunneling magnetoresistance effect magneto-dependent sensor. The tunneling magnetoresistance effect magneto-dependent sensor comprises a substrate; a smooth layer arranged on the substrate; a detection magnetic layer which is arranged on the smooth layer and is a thin film with superparamagnetism; a barrier layer disposed on the detection magnetic layer; a reference magnetic layer which is arranged on the barrier layer and is a thin film with magnetic anisotropy; and a covering layer which is arranged on the reference magnetic layer, wherein a magnetic multilayer film structure is formed, and the covering layer is used for protecting the magnetic multilayer film structure.

Description

technical field [0001] The invention relates to the field of spin electronics, in particular to a tunneling magnetoresistance effect magnetosensitive sensor based on a superparamagnetic thin film and a preparation method thereof. Background technique [0002] High-performance magnetic sensors have broad application prospects in many cutting-edge fields, such as data storage, automobiles, CNC machine tools, household appliances, and financial security. According to different detection principles, the current large-scale commercial application of magnetosensitive sensors can be divided into different categories, including Hall sensors, anisotropic magnetoresistance (AMR) effect sensors, giant magnetoresistance (GMR) effect and tunneling magnetosensors. Resistance (TMR) effect sensor. Semiconductor Hall effect magnetosensitive sensors and anisotropic magnetoresistance (AMR) effect magnetosensitive sensors are two kinds of magnetoresistive magnetosensitive sensors developed ear...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09
CPCG01R33/098
Inventor 赵建华赵旭鹏秦红蕊
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI