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Piezoelectric excitation and tension type silicon microresonant pressure sensor chip and its preparation method

A pressure sensor, piezoelectric excitation technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric devices/electrostrictive devices, electric solid devices, etc., can solve temperature stability and packaging thermal stress Large impact, high requirements for electrode spacing control, complex optical system design, etc., to achieve strong anti-interference ability, improve detection accuracy, and improve sensitivity

Active Publication Date: 2020-11-10
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Electrostatic excitation only requires two electrodes, which is easy to miniaturize, but the disadvantage is that the control of the electrode spacing is high; electromagnetic excitation requires a magnetic field, which is not easy to miniaturize; optical excitation requires the use of an optical path for excitation, and its optical system design is complex and miniaturization is difficult. Large; electrothermal excitation uses thermal stress caused by temperature difference to excite vibration, the disadvantage is that temperature stability and package thermal stress have a great influence

Method used

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  • Piezoelectric excitation and tension type silicon microresonant pressure sensor chip and its preparation method
  • Piezoelectric excitation and tension type silicon microresonant pressure sensor chip and its preparation method
  • Piezoelectric excitation and tension type silicon microresonant pressure sensor chip and its preparation method

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Embodiment Construction

[0047] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0048] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are described based on the orientation or positional relationship shown in the drawings, and are only for convenience The description of the present invention and simplified description do not indicate or imply that the device or element referred to must have a specific orientation, or a specific orientation configuration and operation, and thus should not be construed as limiting the present invention.

[0049] refer to figure 1 and figure 2 , the piezoelectric excitation and tension silicon microresonant pressure sensor chip includes a sealing gl...

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Abstract

The invention provides a piezoelectric excitation tensioned silicon micro-resonant pressure sensor chip and a preparation method thereof. The pressure sensor chip mainly includes a sealed glass cover, a resonator layer, a pressure-sensitive film layer, a stress isolation pad, and a piezoelectric excitation element. And resistance pickup element, using a composite structure of pressure-sensitive diaphragm and resonator, which is a secondary sensitive mode. The resonator layer includes a resonant beam and a torsion beam. The extensions at one end of the two adjacent resonant beams are connected to the same suspended torsion The other end of the beam is connected to the mass block. There is a coupling beam in the middle of the mass block. The resonator is connected to the anchor point through the connection point. There is a pressure guide hole on the stress isolation pad. The pressure is transmitted from the pressure guide hole to the rectangular pressure sensitive diaphragm, causing it to The deformation is amplified by the anchor point and transmitted to the resonator layer. Piezoelectric excitation elements and resistive vibration pickup elements are respectively arranged on the outer surfaces of the resonant beam and coupling beam. The piezoelectric excitation elements and resistive vibration pickup elements are connected to the outside through wires respectively. Circuit connection.

Description

technical field [0001] The invention belongs to the field of micro-nano manufacturing and sensing, and in particular relates to a piezoelectric excitation and tension silicon micro-resonance pressure sensor chip and a preparation method thereof. Background technique [0002] The working mechanism of the silicon microresonant pressure sensor is to measure the pressure indirectly by measuring the change of the natural frequency of the resonator. It has the characteristics of high precision, good long-term stability, and low power consumption. It is widely used in aerospace, meteorological data acquisition, and navigation depth detection. , Industrial control and other fields. However, at present, 70% of the high-precision pressure sensors needed in China depend on imports, and procurement is difficult, which seriously affects the development of high-precision pressure measurement in my country. Therefore, it is very important to carry out research on high-precision resonant pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/20H01L41/09H01L41/25H10N39/00H10N30/03H10N30/20
Inventor 蒋维乐李雪娇赵立波韩香广方续东郭鑫卢德江王鸿雁吴永顺赵玉龙
Owner XI AN JIAOTONG UNIV
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