Fabrication method of semiconductor structure

Abstract

An embodiment of the present invention provides a method for fabricating a semiconductor structure, including: providing a substrate; forming an insulating layer on the substrate, the insulating layer including a first dielectric layer and a second dielectric layer; wherein the insulating layer has a first groove, The second dielectric layer covers the upper surface of the first dielectric layer; forming a protective layer, the protective layer covers the upper surface of the second dielectric layer, the bottom and the sidewall of the first trench; removing part of the protective layer to expose the second dielectric layer At least part of the surface; using a first wet etching process to remove the second dielectric layer, the first wet etching process has a first etching selectivity ratio for the material of the second dielectric layer and the material of the first dielectric layer; using the second The protective layer is removed by a wet etching process, and the second wet etching process has a second etching selectivity ratio between the material of the protective layer and the material of the first dielectric layer, and the second etching selectivity ratio is greater than the first etching selectivity ratio. The embodiments of the present invention are beneficial to optimize the morphology of the finally formed target pattern.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a method for fabricating a semiconductor structure. Background technique [0002] In the fabrication process of the semiconductor structure, the dry etching process and the wet etching process can be selected according to actual needs. The dry etching process mainly uses reactive gas and plasma etching to remove materials in a specific area. The wet etching process It mainly uses chemical reagents to react with the material to be etched to remove specific exposed materials. Compared with the dry etching process, the wet etching process has a higher etching selectivity ratio. In the actual process, when the target pattern is obtained by the dry etching process and the wet etching process, due to the problem of the etching selectivity ratio of different materials, the morphology of the final obtained target pattern is often abnormal. How to solve the above ...

AI Technical Summary

Problems solved by technology

In the actual process, when the target pattern is obtained by using the dry etching process and the wet etching process, due to the problem of the etching selectivity ratio of different materials, the morphology of the finally obtained target pattern is often abnormal.

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