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Array substrate, array substrate manufacturing method and display panel

A technology for array substrates and display panels, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, and climate sustainability, and can solve problems affecting the sensitivity of photosensitive sensors, weak electric fields, and the inability to effectively separate photogenerated electrons and holes

Active Publication Date: 2021-07-06
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the P-α-Si grown by ion implantation or plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) is at the top of the incident light, far away from the junction region of the heterojunction, the electric field is weak and cannot Effective separation of photogenerated electrons and holes, seriously affecting the sensitivity of the photosensitive sensor

Method used

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  • Array substrate, array substrate manufacturing method and display panel
  • Array substrate, array substrate manufacturing method and display panel
  • Array substrate, array substrate manufacturing method and display panel

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Embodiment Construction

[0039] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0040] It should be noted that, in the description of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have...

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Abstract

The invention discloses an array substrate, an array substrate manufacturing method and a display panel. The array substrate comprises a substrate and a photosensitive element. The photosensitive element is arranged on the substrate and comprises a doped semiconductor layer, an intrinsic semiconductor layer and a transparent electrode layer which are sequentially stacked; wherein the doped semiconductor layer is an N-type doped semiconductor, and the transparent electrode layer is a P-type transparent electrode, or the doped semiconductor layer is a P-type doped semiconductor, and the transparent electrode layer is an N-type transparent electrode. By improving the internal structure of the photosensitive element, the light absorption of the incident interface of the intrinsic semiconductor layer can be enhanced, so that the sensitivity of the photosensitive element is enhanced.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method of the array substrate and a display panel. Background technique [0002] With the rapid development of the panel industry, in addition to the requirements for high resolution, wide viewing angle, and low power consumption of the display, people also put forward other requirements for the display panel. Enriching panel functions, increasing human-computer interaction, and improving the competitiveness of display panels are one of the main development directions of display panels at present. [0003] Optical fingerprints, ambient light sensors and other photosensitive elements (sensors) are currently developing relatively hot directions. At present, the production process of panel factories often uses polysilicon (poly-Si) to make the light-absorbing layer of the photosensitive sensor, but the thickness of the poly-Si photosensi...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L27/32
CPCH01L27/1222H01L27/1259H01L27/127H10K59/60Y02P70/50H10K59/126H10K59/879G02F1/13312G02F1/1362H10K59/8792G02F1/136209
Inventor 龚帆艾飞宋继越
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD