Method for measuring film thickness of semiconductor device
A measurement method and semiconductor technology, applied in measurement devices, instruments, optical devices, etc., can solve the distortion of measurement results, the inability to effectively monitor the real film thickness of the main storage area, and the inability of the measurement frame to simulate the structure of the real main storage area. Film thickness, etc.
Pending Publication Date: 2021-07-09
CHANGXIN MEMORY TECH INC
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[0002] The DRAM structure includes the storage area and the peripheral circuit area. For film thickness measurement, the traditional measurement method is to place some flat measurement frames (measure PAD) on the scribe line, and then use the stacking method to simulate the main storage area and the periphery. The one-dimensional film structure of the circuit, the current detection method, at some key sites, the measurement frame cannot simulate the real structure and film thickness of the main storage area, resulting in distortion of the measurement results, and the actual and effective monitoring of the real film thickness of the main storage area
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[0025] The specific implementation of the method for measuring the film thickness of a semiconductor device provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0026] figure 1 is a schematic diagram of the structure of a semiconductor device. see figure 1 , the semiconductor device includes a substrate 10 and a target film layer 11 disposed on the substrate 10 . The target film layer 11 is the top film layer. The top film layer is the uppermost layer of the semiconductor device after the current semiconductor device is formed and before the thickness of the target film layer of the semiconductor device is measured. After measuring the thickness of the target film layer of the semiconductor device, other film layers may also be formed on the target film layer, which is not limited in the present invention.
[0027] The semiconductor device has a main storage area B and a measurement area A. The main storage a...
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Abstract
The invention provides a method for measuring the film thickness of a semiconductor device, wherein a reference semiconductor device and a to-be-measured semiconductor device have the same structure, and the structures of substrates and target film layers of the reference semiconductor device and the to-be-measured semiconductor device are the same. Therefore, the real thickness of the target film layer of the to-be-measured semiconductor device is obtained through the relationship between the reference spectrogram of the reference semiconductor device and the measurement spectrogram of the to-be-measured semiconductor device, so that the real film thickness of the target film layer of a main storage area is actually and effectively monitored.
Description
technical field [0001] The invention relates to the field of integrated circuits, in particular to a method for measuring the film thickness of a semiconductor device. Background technique [0002] The DRAM structure includes the storage area and the peripheral circuit area. For film thickness measurement, the traditional measurement method is to place some flat measurement frames (measure PAD) on the scribe line, and then use the stacking method to simulate the main storage area and the periphery. The one-dimensional film structure of the circuit, the current detection method, at some key sites, the measurement frame cannot simulate the real structure and film thickness of the main storage area, resulting in distortion of the measurement results, and the actual and effective monitoring of the real film thickness of the main storage area . [0003] Therefore, there is an urgent need for a new method for measuring the film thickness of a semiconductor device, so as to actual...
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IPC IPC(8): G01B11/06
CPCG01B11/06
Inventor 盛永尚
Owner CHANGXIN MEMORY TECH INC