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Apparatus for treating substrate and method for treating substrate

A substrate and liquid processing technology, which is applied to the device for processing substrates and the field of substrate processing, can solve the problem of high incidence of process defects, and achieve the effect of reducing process defects and improving processing efficiency

Pending Publication Date: 2021-07-16
SEMES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the above-mentioned supercritical drying, when the process of the first substrate to be processed is performed in the idle (IDLE) state of the high-pressure chamber that is not used for a predetermined period of time, the occurrence rate of process defects is high

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  • Apparatus for treating substrate and method for treating substrate
  • Apparatus for treating substrate and method for treating substrate
  • Apparatus for treating substrate and method for treating substrate

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Embodiment approach

[0076] On the other hand, the second embodiment of the present invention consumes less supercritical fluid to maintain the piping temperature of the supply line than the first embodiment of the present invention. For example, the consumption of the supercritical fluid of the second embodiment of the present inventive concept is 6 times less than that of the first embodiment of the present inventive concept.

[0077] After the substrate 'W' is supplied to the device for processing the substrate and the process is started, the liquid treatment process is performed, and then the supercritical drying process is started. And there are 2 minutes to 3 minutes between the liquid treatment process and the supercritical drying process. At this time, if the supercritical fluid is supplied to the supply line at a predetermined rate, the temperature of the supply line rises to the temperature of the supercritical process. Therefore, it is possible to minimize process defects caused by tem...

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Abstract

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, the apparatus for treating the substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in a supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside a high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. §119 to Korean Patent Application 10-2019-0179294 filed with the Korean Intellectual Property Office on December 31, 2019, the entire contents of which are incorporated herein by reference. technical field [0003] Embodiments of the inventive concepts described herein relate to methods for processing a substrate and apparatuses for processing a substrate. Background technique [0004] The semiconductor manufacturing process includes cleaning thin films, foreign matter, particles, etc. on the substrate. As the design rule of semiconductor devices decreases, patterns frequently collapse or abut due to surface tension of chemical solutions during drying of chemical solutions after wet processes such as etching process or cleaning process. The bridge of the pattern of the pattern. In addition, fine particles present at deep and narrow spaces between patterns cause defecti...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/6704H01L21/67034H01L21/02101B08B7/0021H01L21/67748H01L21/67051H01L21/67017H01L21/67742H01L21/67023H01L21/67167H01L21/68707B08B13/00B08B3/08B08B3/10H01L21/67207
Inventor 崔永燮李暎熏郑镇优朴美昭
Owner SEMES CO LTD