Plasma inductance coil structure, plasma processing equipment and plasma processing method

An inductive coil and plasma technology, applied in the field of plasma treatment, can solve problems such as uneven etching

Pending Publication Date: 2021-07-16
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the above technical problems, the embodiment of the present application provides a plasma induction coil struct

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma inductance coil structure, plasma processing equipment and plasma processing method
  • Plasma inductance coil structure, plasma processing equipment and plasma processing method
  • Plasma inductance coil structure, plasma processing equipment and plasma processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0057] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0058] As mentioned in the background section, during the etching proce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention discloses a plasma inductance coil structure. The magnetic field intensity generated by a first part of an inductance coil is greater than the magnetic field intensity generated by a second part of the inductance coil, so that the inductance coil forms an asymmetric magnetic field. The projection of the first part of the first inductance coil in the preset plane and the projection of the second part of the second inductance coil in the preset plane in the at least two inductance coils are at least partially overlapped in the first direction so as to compensate the magnitude of the magnetic field intensity generated by the second part of the second inductance coil; meanwhile, the projection of the second part of the first inductance coil in the preset plane and the projection of the first part of the second inductance coil in the preset plane are at least partially overlapped in the first direction so as to compensate the magnitude of the magnetic field intensity generated by the second part of the first inductance coil; and at least one of the first capacitor electrically connected with the first inductance coil and the second capacitor electrically connected with the second inductance coil is an adjustable capacitor, so that the phenomenon of non-uniform etching is solved.

Description

technical field [0001] The present application relates to the technical field of plasma processing, and in particular to a plasma induction coil structure, plasma processing equipment and a processing method. Background technique [0002] As the chip size of integrated circuits becomes smaller and smaller, the requirements for plasma processing equipment are also getting higher and higher, so that the plasma processing equipment using this technology is also continuously improved. The plasma processing equipment includes a reaction chamber, The base platform located in the reaction chamber, the gas shower head opposite to the base base, and the plasma induction coil structure located on the side of the gas shower head away from the base base, however, currently plasma processing equipment is etching During the process, the problem of uneven etching often occurs at different positions at the same distance from the center of the substrate. Contents of the invention [0003]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H05H1/46
CPCH05H1/46
Inventor 赵馗陈煌琳庞晓贝倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap