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Gate voltage passive amplitude limiting circuit applied to IGBT driving control

A technology of gate voltage and limiting circuit, which is applied in the direction of electrical components, electronic switches, pulse technology, etc., and can solve problems such as false triggering

Pending Publication Date: 2021-07-20
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the existing IGBT drive circuit in the prior art is likely to cause false triggering in the power-off state, the present invention provides a gate voltage passive limiter circuit applied to IGBT drive control, including: capacitor, TVS tube series branch, charging diode, switch control circuit and power supply;

Method used

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  • Gate voltage passive amplitude limiting circuit applied to IGBT driving control
  • Gate voltage passive amplitude limiting circuit applied to IGBT driving control
  • Gate voltage passive amplitude limiting circuit applied to IGBT driving control

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Embodiment 1

[0030] The invention discloses an IGBT gate voltage passive limiting circuit, which comprises a collector voltage protection circuit, a switch control circuit, and a charging power supply network;

[0031] The collector voltage protection circuit is connected in parallel between the collector and the gate of the IGBT, and includes a group of TVS transistors connected in series. The TVS tube can be composed of multiple TVS tubes connected in series. The cathode of the TVS tube is connected to the collector of the IGBT, and the anode is connected to the gate of the IGBT.

[0032] The charging power supply network consists of charging diodes and power supplies.

[0033] The collector voltage protection circuit is also called a TVS tube series branch.

[0034] A gate voltage passive limiter circuit applied to IGBT drive control, such as figure 2 Shown: including: capacitor, TVS tube series branch, charging diode, switch control circuit and power supply;

[0035] Both the capa...

Embodiment 2

[0050] figure 2It is a circuit diagram of the gate voltage limiter of the two-way switch control circuit in the patent implementation mode of the present invention. The IGBT gate voltage limiting circuit can be used in the IGBT drive circuit. When the IGBT and the IGBT driving circuit work normally, the charging power supply network VCC is not charged.

[0051] Working condition 1: When an overvoltage fault occurs at the collector, the TVS tube T 1 ~T N conduction, figure 1 The current shown in I 1 Make the gate voltage V through the TVS tube G uplift, figure 2 The charge current shown in I charge Via TVS Tube and D 2 Charging to the charging power network VCC.

[0052] Working condition 2: When the external circuit causes the parasitic capacitance between the IGBT collector and the gate to generate a large dv / dt, the resulting figure 1 The current shown in I 2 make the gate voltage V G uplift, figure 2 The current shown in I charge by D 2 Charging to the cha...

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Abstract

The invention provides a gate voltage passive amplitude limiting circuit applied to IGBT driving control. The gate voltage passive amplitude limiting circuit comprises a capacitor, a TVS series branch, a charging diode, a switch control circuit and a power supply. The capacitor and the TVS tube series branch are connected between the collector electrode and the gate electrode of the IGBT; the switch control circuit and the anode of the charging diode are both connected with the gate pole of the IGBT; the emitter of the IGBT is grounded or connected with the switch control circuit; the negative electrode of the charging diode is connected with the power supply. According to the invention, false triggering generated when the IGBT drive is in a power-down state is avoided.

Description

technical field [0001] The invention relates to the field of IGBT drive control, in particular to a gate voltage passive limiter circuit applied to IGBT drive control. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). Power electronic converters designed based on IGBT devices are widely used in various industries, including switching power supplies, locomotive traction, mining, metallurgy, motor drives, power transmission, power electronic transformers, frequency converters and other occasions. Economic development plays a vital role. [0003] In high-power applications, the reliable operation of the IGBT needs to be realized through the control and protection of the IGBT drive. The IGBT is a voltage-controlled device. When an overvoltage fault occurs at the collector or the stray capacitance C...

Claims

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Application Information

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IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 客金坤李霄白建成许航宇池浦田
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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