Unlock instant, AI-driven research and patent intelligence for your innovation.

Photosensitive resin composition, production method for patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protection film, and electronic component

A technology of photosensitive resin and composition, applied in the field of photosensitive resin composition, can solve the problem of insufficient imidization of polyimide precursor, and achieve excellent mechanical properties and high imidization rate. Effect

Pending Publication Date: 2021-07-23
HD MICROSYSTEMS LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the curing reaction at 200° C. or less, there is a p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photosensitive resin composition, production method for patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protection film, and electronic component
  • Photosensitive resin composition, production method for patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protection film, and electronic component
  • Photosensitive resin composition, production method for patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protection film, and electronic component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0266] Hereinafter, based on an Example and a comparative example, this invention is demonstrated concretely. In addition, this invention is not limited to a following Example.

Synthetic example 1

[0267] Synthesis Example 1 (Synthesis of Polymer A1)

[0268] 7.07 g of 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride (ODPA), 0.831 g of 2-hydroxyethyl methacrylate (HEMA) and a catalytic amount of 1,4-diazabicyclo [2.2.2] Octanetriethylenediamine was dissolved in 30 g of N-methyl-2-pyrrolidone (NMP), stirred at 45°C for 1 hour, and then cooled to 25°C. A solution obtained by dissolving 4.12 g of 2,2'-dimethylbiphenyl-4,4'-diamine (DMAP) in NMP was added, stirred at 30° C. for 4 hours, and then stirred overnight at room temperature, A polyamic acid was obtained. After adding 9.45 g of trifluoroacetic anhydride dropwise to this solution, stir at 45° C. for 3 hours, add a catalytic amount of benzoquinone, further add 7.08 g of 2-hydroxyethyl methacrylate (HEMA), and stir at 45° C. for 20 hours. . This reaction liquid was added dropwise to distilled water, and the deposit was collected by filtration and dried under reduced pressure to obtain a polyimide precursor (herei...

Embodiment 1~12 and comparative example 1~7

[0365] [Preparation of photosensitive resin composition]

[0366] With the components and compounding quantities shown in Table 1, the photosensitive resin composition of Examples 1-12 and Comparative Examples 1-7 was prepared. The compounding quantity of Table 1 is the mass part of each component with respect to 100 mass parts of (A) components.

[0367] [Evaluation of cured film]

[0368] (Measurement of imidization rate 1)

[0369] The obtained photosensitive resin composition was spin-coated on a silicon substrate (support substrate), dried at 105° C. for 2 minutes, and further dried at 115° C. for 2 minutes to form a resin film (A) having a thickness of 12 μm after drying. Using "mask aligner MA-8" (manufactured by SUSS MicroTec Co., Ltd.), 700 mJ / cm 2 of light exposure. Then, using a vertical diffusion furnace "μ-TF" (manufactured by Koyo Thermo System Co., Ltd.), the wafer with the resin film was heated at 160° C. for 2 hours in a nitrogen atmosphere to obtain a cur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A photosensitive resin composition according to the present invention includes (A) a polyimide precursor having a polymerizable unsaturated bond, (B) a compound represented by formula (1), (C) a photopolymerization initiator, and (D) a thermal radical generator. (In formula (1), A represents a divalent organic group and does not include an acrylic group or a methacrylic group, R1-R4 independently represent a hydrogen atom or a C1-4 aliphatic hydrocarbon group, n1 and n2 independently represent integers from 1 to 20, and m1 and m2 independently represent 0 or 1.).

Description

technical field [0001] The present invention relates to a photosensitive resin composition, a method for producing a patterned cured film, a cured film, an interlayer insulating film, a cover coat, a surface protection film, and an electronic component. Background technique [0002] Conventionally, polyimide, polybenzone, etc., which have excellent heat resistance, electrical properties, and mechanical properties, have been used for surface protection films and interlayer insulating films of semiconductor elements. azole. In recent years, the photosensitive resin composition which imparts photosensitive properties to these resins itself has been used, and if the photosensitive resin composition is used, the manufacturing process of the patterned cured film can be simplified, and the complicated manufacturing process can be shortened (for example, refer to Patent Document 1). [0003] However, in recent years, the miniaturization of transistors supporting higher performanc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/027C08F290/00G03F7/004G03F7/20G03F7/40
CPCC08F290/00G03F7/004G03F7/027G03F7/20G03F7/40C08F2/50C08F290/145C08G73/12C08F222/1063G03F7/028G03F7/037G03F7/32
Inventor 东绫香阿部悟志山崎范幸
Owner HD MICROSYSTEMS LTD