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SOT-MRAM based on bottom electrode parallel voltage control and manufacturing method thereof

A SOT-MRAM, voltage control technology, applied in the manufacture/processing of electromagnetic devices, field-controlled resistors, components of electromagnetic equipment, etc. The effect of integration and industrialization

Active Publication Date: 2021-07-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above analysis, the embodiment of the present invention aims to provide a SOT-MRAM based on the parallel voltage control of the bottom electrode and its manufacturing and writing method, so as to solve the problem that the existing SOT-MRAM is difficult to realize the magnetic field that is easy to integrate and industrialize. The problem with moment-oriented flipping

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  • SOT-MRAM based on bottom electrode parallel voltage control and manufacturing method thereof
  • SOT-MRAM based on bottom electrode parallel voltage control and manufacturing method thereof
  • SOT-MRAM based on bottom electrode parallel voltage control and manufacturing method thereof

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Embodiment 1

[0035] A specific embodiment of the present invention discloses a SOT-MRAM based on voltage control in the parallel direction of the bottom electrode. The schematic diagram of the top view is as follows figure 1 As shown, the schematic diagram of the cross-section is shown in figure 2 shown, including:

[0036] The ferroelectric thin film layer is provided with two metal electrodes, and the first voltage is applied to the ferroelectric thin film layer through the two metal electrodes.

[0037] The bottom electrode is located on the ferroelectric thin film layer and arranged in the middle of the ferroelectric thin film layer, and is in the shape of a strip, and a second voltage is applied to both ends of the bottom electrode.

[0038] The tunnel junction is located on the bottom electrode and arranged in the middle of the bottom electrode, and includes a free layer, a tunnel layer and a reference layer stacked sequentially from bottom to top.

[0039] Wherein, the two metal ...

Embodiment 2

[0057] A specific embodiment 2 of the present invention discloses a method of manufacturing SOT-MRAM based on the voltage control of the bottom electrode parallel direction, such as image 3 shown, including:

[0058] S1. Growing a ferroelectric thin film on a circuit chip to form a ferroelectric thin film layer.

[0059] During implementation, the material of the ferroelectric thin film layer is HfZrO or PZT, and the thickness is 3-10 nm.

[0060] Specifically, the growth method of the ferroelectric thin film is one of physical vapor deposition and atomic layer deposition.

[0061] More specifically, Physical Vapor Deposition (Physical Vapor Deposition, PVD) and Atomic Layer Deposition (Atomic layer deposition, ALD) can be used to grow HrZrO etc. and Complementary Metal-Oxide-Semiconductor (Complementary Metal-Oxide-Semiconductor, CMOS) compatible ferroelectric thin films.

[0062] Specifically, the ferroelectric thin film layer is processed into a square shape, and the bo...

Embodiment 3

[0075] A specific embodiment 3 of the present invention provides a writing method of SOT-MRAM. According to the SOT-MRAM in embodiment 1, corresponding information storage can be performed, specifically:

[0076] The first voltage is input to the ferroelectric film layer through the two metal electrodes, the second voltage is input to the bottom electrode layer through the two ends of the bottom electrode, and the positive voltage of the first voltage and the second voltage is controlled. Negative, the writing of SOT-MRAM is completed. That is to say, when performing SOT-MRAM writing, when the positive or negative of the first voltage applied to the ferroelectric thin film layer is determined, different data can be written by changing the positive or negative of the second voltage applied to the bottom electrode; Different data can be written by changing the positive or negative of the first voltage applied to the ferroelectric thin film layer when the positive or negative of ...

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Abstract

The invention relates to an SOT-MRAM based on bottom electrode parallel voltage control and a manufacturing method thereof, belongs to the technical field of semiconductor devices and manufacturing thereof, and solves the problem that the SOT-MRAM in the prior art is difficult to realize the magnetic moment directional flipping convenient for integration and industrialization. The SOT-MRAM comprises a ferroelectric film layer which is equipped with two metal electrodes, wherein a first voltage is applied to the ferroelectric film layer through the two metal electrodes; a bottom electrode which is located on the ferroelectric film layer, arranged in the middle of the ferroelectric film layer and in a long strip shape, wherein a second voltage is applied to the two ends of the bottom electrode; a tunnel junction which is located on the bottom electrode, is arranged in the middle of the bottom electrode and comprises a free layer, a tunneling layer and a reference layer which are sequentially stacked from bottom to top, wherein the two metal electrodes are oppositely arranged at the two opposite edges of the ferroelectric film layer and are located at one side of a center line of the edges, the two edges are located at the two sides of the short edge direction of the bottom electrode, and the direction in which the first voltage is applied through the two metal electrodes is parallel to the long edge direction of the bottom electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and their manufacture, in particular to a SOT-MRAM based on bottom electrode parallel voltage control and a manufacturing and writing method. Background technique [0002] With the advent of the era of big data, smaller, faster, and more energy-efficient are still the development needs of data storage devices. In the field of semiconductor memory, Magnetic Random Access Memories (MRAM) that use electron spins to store data Due to its advantages of high speed, low voltage, high density, and non-volatility, it has become a research hotspot. Among them, spin-orbit torque magnetoresistive random access memory (Spin-Orbit Torque Magnetoresistive Random Access Memory, SOT-MRAM) has the advantages of read and write separation, fast writing speed, etc., and is considered to be the next generation of magnetic random access memory, and because the write current It does not pass through the tu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/04H01L43/08H01L43/12H01L43/14H10N50/80H10N50/01H10N50/10H10N52/01H10N52/80
CPCH10N52/80H10N52/01H10N50/80H10N50/01H10N50/10
Inventor 杨美音罗军崔岩许静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI