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Sot-mram based on parallel voltage control of bottom electrode and its manufacturing method

A SOT-MRAM, voltage control technology, applied in the manufacture/processing of electromagnetic devices, resistors for magnetic field control, parts of electromagnetic equipment, etc. The effect of integration and industrialization

Active Publication Date: 2022-08-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above analysis, the embodiment of the present invention aims to provide a SOT-MRAM based on the parallel voltage control of the bottom electrode and its manufacturing and writing method, so as to solve the problem that the existing SOT-MRAM is difficult to realize the magnetic field that is easy to integrate and industrialize. The problem with moment-oriented flipping

Method used

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  • Sot-mram based on parallel voltage control of bottom electrode and its manufacturing method
  • Sot-mram based on parallel voltage control of bottom electrode and its manufacturing method
  • Sot-mram based on parallel voltage control of bottom electrode and its manufacturing method

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Embodiment 1

[0035] A specific embodiment of the present invention discloses a SOT-MRAM based on the parallel voltage control of the bottom electrode. The schematic top view is as follows: figure 1 As shown, the schematic diagram of the cross-section is shown in figure 2 shown, including:

[0036] The ferroelectric thin film layer is provided with two metal electrodes, and a first voltage is applied to the ferroelectric thin film layer through the two metal electrodes.

[0037] The bottom electrode is located on the ferroelectric thin film layer and arranged in the middle of the ferroelectric thin film layer, and is in the shape of a long strip, and a second voltage is applied to both ends of the bottom electrode.

[0038] The tunnel junction is located above the bottom electrode and is arranged in the middle of the bottom electrode, and includes a free layer, a tunnel layer and a reference layer stacked in sequence from bottom to top.

[0039] Wherein, two metal electrodes are opposite...

Embodiment 2

[0057] A specific embodiment 2 of the present invention discloses a manufacturing method of SOT-MRAM based on bottom electrode parallel voltage control, such as image 3 shown, including:

[0058] S1, growing a ferroelectric thin film on the circuit chip to form a ferroelectric thin film layer.

[0059] During implementation, the material of the ferroelectric thin film layer is HfZrO or PZT, and the thickness is 3-10 nm.

[0060] Specifically, the growth mode of the ferroelectric thin film is one of physical vapor deposition and atomic layer deposition.

[0061] More specifically, physical vapor deposition (Physical Vapour Deposition, PVD) and atomic layer deposition (Atomic layer deposition, ALD) can be used to grow HrZrO and other complementary metal oxide semiconductors (Complementary Metal-Oxide-Semiconductor, CMOS) compatible ferroelectric thin film.

[0062] Specifically, the ferroelectric thin film layer is processed into a square shape, and the bottom electrode is l...

Embodiment 3

[0075] A specific embodiment 3 of the present invention provides a method for writing SOT-MRAM. According to the SOT-MRAM in embodiment 1, corresponding information storage can be performed, specifically:

[0076] A first voltage is input to the ferroelectric thin film layer through the two metal electrodes, a second voltage is input to the bottom electrode layer through both ends of the bottom electrode, and the positive value of the first voltage and the second voltage is controlled by controlling Negative, complete the writing of SOT-MRAM. That is to say, when writing the SOT-MRAM, when the positive or negative of the first voltage applied by the ferroelectric thin film layer is determined, different data can be written by changing the positive or negative of the second voltage applied by the bottom electrode; When the positive and negative values ​​of the second voltage applied by the bottom electrode are determined, different data can be written by changing the positive a...

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Abstract

The invention relates to a SOT-MRAM based on bottom electrode parallel direction voltage control and a manufacturing method, belonging to the technical field of semiconductor devices and manufacturing thereof, and solving the problem that the SOT-MRAM in the prior art is difficult to realize the magnetic moment orientation inversion which is convenient for integration and industrialization The problem. It includes a ferroelectric thin film layer, and is provided with two metal electrodes, through which the first voltage is applied to the ferroelectric thin film layer; the bottom electrode is located on the ferroelectric thin film layer and arranged in the middle of the ferroelectric thin film layer, and is in the shape of a long strip. A second voltage is applied across the bottom electrode; the tunnel junction is located above the bottom electrode and is arranged in the middle of the bottom electrode, and includes a free layer, a tunneling layer and a reference layer stacked in sequence from bottom to top; wherein, the two metal electrodes It is arranged on two opposite edges of the ferroelectric thin film layer, and is located on one side of the center line of the edge, and the two edges are located on both sides of the short side direction of the bottom electrode, and the direction of applying the first voltage through the two metal electrodes parallel to the longitudinal direction of the bottom electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and their manufacture, in particular to a SOT-MRAM based on parallel voltage control of the bottom electrode and a method for manufacturing and writing the same. Background technique [0002] With the advent of the era of big data, smaller, faster and more energy-efficient are still the development requirements of current data storage devices. In the field of semiconductor memory, Magnetic Random Access Memories (MRAM), which uses electron spin to realize data storage, are still needed. It has become a research hotspot due to its advantages of high speed, low voltage, high density, and non-volatility. Among them, Spin-Orbit Torque Magnetoresistive Random Access Memory (SOT-MRAM) has the advantages of read-write separation and fast writing speed, and is considered to be the next generation of magnetic random access memory. It does not pass through the tunnel junction and has extremel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/02H01L43/04H01L43/08H01L43/12H01L43/14H10N50/80H10N50/01H10N50/10H10N52/01H10N52/80
CPCH10N52/80H10N52/01H10N50/80H10N50/01H10N50/10
Inventor 杨美音罗军崔岩许静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI