Magnetron sputtering equipment to improve the cleanliness of magnetron sputtering environment

Abstract

The invention provides a magnetron sputtering device for improving the cleanliness of the magnetron sputtering environment, comprising: a permanent magnet device, a target, a target back plate, an adapter block, an upper baffle, a lower baffle, and a wafer base and the cavity; the upper baffle is arranged in the interior of the cavity along the circumferential direction; the upper baffle includes an integrally formed flange, an inclined portion and a first extension from top to bottom, wherein the upper baffle is installed on a suitable On the matching block, the inclined portion is consistent with the inclination angle of the side of the target, the first extension extends from the edge of the cavity to the center of the cavity, and the projection of the first extension in the lateral direction covers the ineffective sputtering of the edge of the target area. By setting the upper baffle, the accumulation of the stress film in the non-effective sputtering area can be effectively prevented, thereby effectively avoiding the problem of cracking or even falling off of the stress film in the non-effective sputtering area due to the gradual accumulation of the stress film. Particles generated in the non-effective sputtering area can be prevented from entering into the sputtering working environment.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a magnetron sputtering equipment for improving the cleanliness of the magnetron sputtering environment. Background technique [0002] With the development of semiconductor technology, various devices and different semiconductor materials have appeared. Many of these materials have high stress. As the manufacturing process is getting more and more advanced, the requirements for the performance of the film layer are also getting higher and higher, which involves the particle problem of the film layer. [0003] At present, the thin films with high stress prepared by PVD method are mainly metal nitrides, and the production process can adopt radio frequency sputtering method and reactive sputtering method. In the process of sputtering coating, certain active reactive gases are artificially introduced to react with sputtered target particles and then depo...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetron sputtering equipment that improves the cleanliness of the magnetron sputtering environment, which is used to solve the problem of magnetron sputtering equipment in the prior art during the sputtering process. In the target, the stress film layer generated in the non-effective sputtering area of ​​the target gradually accumulates, causing the stress film layer to crack or even fall off to produce particles, etc.

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