A kind of Vcsel chip oxidation real-time monitoring method and equipment
A real-time monitoring and chip technology, applied in laser parts, semiconductor lasers, electrical components, etc., can solve the problems of unreasonable oxidation control method, poor product consistency, low yield and other problems, achieve good applicability, improve yield, Simple to use effects
Active Publication Date: 2021-11-23
福建慧芯激光科技有限公司
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[0005] The invention provides a VCSEL chip oxidation real-time monitoring method and equipment, the main purpose of which is to solve the problems of poor product consistency and low yield rate caused by the unreasonable oxidation control method of the existing VCSEL chip
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[0036] Specific embodiments of the present invention will be described below with reference to the accompanying drawings. In order to provide a comprehensive understanding of the present invention, many details are described below, but it will be apparent to those skilled in the art that the present invention can be practiced without these details.
[0037] Such as Figure 1 to Figure 7 Shown, a kind of VCSEL chip oxidation real-time monitoring method is characterized in that: comprises the steps:
[0038] (1) Pre-treat the epitaxial wafer to be oxidized, first deposit a p-type contact metal electrode on the top of the epitaxial wafer, and then perform oxidation mesa etching, divide the epitaxial wafer into monitoring area B and target chip area C, in monitoring area B Etch the monitoring oxidation mesa, and etch the target oxidation mesa in the target chip region C; preferably, deposit a Ti / Au metal film on the top of the epitaxial wafer as a p-type contact metal electrode. ...
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The invention discloses a VCSEL chip oxidation real-time monitoring method and equipment. The method comprises the following steps: first depositing a p-type contact metal electrode on the top of an epitaxial wafer to be oxidized, and then dividing the epitaxial wafer into a monitoring area and a target chip area, respectively Etch the monitoring oxidation mesa and the target oxidation mesa; put the epitaxial wafer into the oxidation chamber, and connect the p-type contact metal electrode in the monitoring area and the back of the substrate to the capacitance meter; start the oxidation process, and collect and monitor the oxidation mesa in real time through the capacitance meter. Capacitance-voltage curve during the oxidation time, and obtain the capacitance C before oxidation s , the capacitance C at any moment of oxidation dep and the capacitance C of the oxidized part sox Real-time calculation of the oxidized area A of the monitoring oxidation table, and further obtain the oxidation depth D of the monitoring oxidation table; use the oxidation depth and oxidation time as the oxidation monitoring reference index, draw the curve relationship diagram of oxidation depth-oxidation time, and thus Real-time control of the oxidation depth of the target chip area.
Description
technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method and equipment for real-time monitoring of VCSEL chip oxidation. Background technique [0002] With the continuous development of science and technology, various VCSEL chips have been widely used in people's daily life, work and industry, bringing great convenience to people's life. The oxide confinement process is one of the core technologies of VCSEL chips. The current popular method of oxide confinement is to first place Al with high Al x Ga 1-x As is designed as a one- or two-layer structure, which is placed on one or both sides of the active layer by means of epitaxial growth, and then the Al x Ga 1-x The As layer is selectively oxidized. al x Ga 1-x The oxidation process of the As layer is carried out laterally from the outer edge to the center, and the oxidation produces electrically insulating Al 2 o 3 . Therefore, by controlling th...
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IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18308H01S5/18344
Inventor 鄢静舟王坤杨奕糜东林
Owner 福建慧芯激光科技有限公司