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VCSEL chip oxidation real-time monitoring method and equipment

A real-time monitoring and chip technology, applied in laser parts, electrical components, lasers, etc., can solve the problems of poor product consistency, low yield, unreasonable oxidation control methods, etc., to improve yield, good applicability, and flexibility. high degree of effect

Active Publication Date: 2021-08-27
福建慧芯激光科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a VCSEL chip oxidation real-time monitoring method and equipment, the main purpose of which is to solve the problems of poor product consistency and low yield rate caused by the unreasonable oxidation control method of the existing VCSEL chip

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  • VCSEL chip oxidation real-time monitoring method and equipment
  • VCSEL chip oxidation real-time monitoring method and equipment
  • VCSEL chip oxidation real-time monitoring method and equipment

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Embodiment Construction

[0036] Specific embodiments of the present invention will be described below with reference to the accompanying drawings. In order to provide a comprehensive understanding of the present invention, many details are described below, but it will be apparent to those skilled in the art that the present invention can be practiced without these details.

[0037] Such as Figure 1 to Figure 7 Shown, a kind of VCSEL chip oxidation real-time monitoring method is characterized in that: comprises the steps:

[0038] (1) Pre-treat the epitaxial wafer to be oxidized, first deposit a p-type contact metal electrode on the top of the epitaxial wafer, and then perform oxidation mesa etching, divide the epitaxial wafer into monitoring area B and target chip area C, in monitoring area B Etch the monitoring oxidation mesa, and etch the target oxidation mesa in the target chip region C; preferably, deposit a Ti / Au metal film on the top of the epitaxial wafer as a p-type contact metal electrode. ...

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Abstract

The invention discloses a VCSEL chip oxidation real-time monitoring method and equipment. The method comprises the following steps: firstly depositing a p-type contact metal electrode at the top of a to-be-oxidized epitaxial wafer, then dividing the epitaxial wafer into a monitoring region and a target chip region, and respectively etching a monitoring oxidation table top and a target oxidation table top; putting the epitaxial wafer into an oxidation chamber, and connecting the p-type contact metal electrode in the monitoring area and the back surface of the substrate to a capacitance meter; starting an oxidation process, collecting capacitance-voltage curves of the monitoring oxidation table top in different oxidation times in real time through the capacitance meter, and obtaining capacitance Cs before oxidation, capacitance Cep at any oxidation moment and capacitance CSox of an oxidized part; calculating the oxidized area A of the monitoring oxidation table top in real time, and calculating the oxidation depth D of the monitoring oxidation table top; and by taking the oxidation depth and the oxidation time as oxidation monitoring reference indexes, drawing an oxidation depth-oxidation time curve relation graph, and controlling the oxidation depth of the target chip area in real time according to the oxidation depth-oxidation time curve relation graph.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method and equipment for real-time monitoring of VCSEL chip oxidation. Background technique [0002] With the continuous development of science and technology, various VCSEL chips have been widely used in people's daily life, work and industry, bringing great convenience to people's life. The oxide confinement process is one of the core technologies of VCSEL chips. The current popular method of oxide confinement is to first place Al with high Al x Ga 1-x As is designed as a one- or two-layer structure, which is placed on one or both sides of the active layer by means of epitaxial growth, and then the Al x Ga 1-x The As layer is selectively oxidized. al x Ga 1-x The oxidation process of the As layer is carried out laterally from the outer edge to the center, and the oxidation produces electrically insulating Al 2 o 3 . Therefore, by controlling th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18308H01S5/18344
Inventor 鄢静舟王坤杨奕糜东林
Owner 福建慧芯激光科技有限公司