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Flexible self-supporting perovskite oxide single crystal films with perpendicular magnetic anisotropy in different crystal orientations and their preparation

A single crystal thin film, anisotropic technology, applied in the field of flexible self-supporting perovskite oxide single crystal thin film and its preparation, can solve problems such as phase transition of metal insulators

Active Publication Date: 2022-07-01
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, by adjusting the crystal orientation of the film, it may have a slight impact on the symmetry, polarity, and oxygen octahedral coupling of its structure, which may lead to properties such as metal-insulator phase transition and two-dimensional electron gas.

Method used

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  • Flexible self-supporting perovskite oxide single crystal films with perpendicular magnetic anisotropy in different crystal orientations and their preparation
  • Flexible self-supporting perovskite oxide single crystal films with perpendicular magnetic anisotropy in different crystal orientations and their preparation
  • Flexible self-supporting perovskite oxide single crystal films with perpendicular magnetic anisotropy in different crystal orientations and their preparation

Examples

Experimental program
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Embodiment 1

[0040] In this embodiment, the preparation method of the flexible self-supporting CSAO single crystal film of [001] crystal orientation is as follows:

[0041] (1) Select the STO substrate of [001] crystal orientation as a substrate, and prepare a soluble substance film on the substrate as a sacrificial layer, as follows:

[0042] (1-1) The area of ​​the [001] crystal orientation STO substrate is 4.4×4.4mm 2 , the thickness is 0.5mm;

[0043] (1-2) Utilize hydrofluoric acid buffer to corrode [001] crystal orientation STO substrate to obtain a surface with straight steps and a width of about 200 nm;

[0044] (1-3) CSAO thin films with a thickness of 10 unit cell (u.c.) were prepared on the [001] crystal orientation STO substrate, and the number of pulses required for each unit cell thickness was 90. The CSAO thin film was prepared using a pulsed laser deposition system. The bottom temperature is 700℃, and the oxygen pressure is 2×10 -3 mbar, pulsed laser energy density of 1....

Embodiment 2

[0051] In this example, in the preparation method of a flexible self-supporting SRO single crystal film with [110] crystal orientation, a [110] crystal orientation STO substrate is selected as the substrate, and other method steps are the same as those in Example 1.

Embodiment 3

[0053] In this example, in the preparation method of the flexible self-supporting SRO single crystal film with the [111] crystal orientation, the STO substrate with the [111] crystal orientation is selected as the substrate, and other method steps are the same as those in Example 1.

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Abstract

The invention discloses a flexible self-supporting perovskite oxide single crystal film with perpendicular magnetic anisotropy in different crystal directions and a preparation method thereof, comprising: the crystal direction is [001], [110] or [ 111] on the substrate of soluble sacrificial layer film, SrRuO 3 The single crystal film and the flexible material are then dissolved and the soluble sacrificial layer film is dissolved for flexible transfer to obtain a flexible self-supporting perovskite oxide single crystal film with perpendicular magnetic anisotropy in different crystal directions. This method provides a feasible method for stacking flexible oxide heterostructures with different crystal orientations and perpendicular magnetic anisotropy, which is important for the application of flexible perovskite oxide films in devices. significance.

Description

technical field [0001] The invention relates to the field of flexible films, in particular to a flexible self-supporting perovskite oxide single crystal film with perpendicular magnetic anisotropy in different crystal directions and a preparation method thereof. Background technique [0002] Magnetic anisotropy, as one of the important parameters of magnetic materials, manifests as the preferred orientation of the magnetization axis in the macroscopic view, and is divided into "difficult" and "easy" in different directions. When the easy axis of magnetization is perpendicular to the surface of the material, the material has Perpendicular Magnetic Anisotropy (PMA). In the field of technical applications, PMA helps to prepare high-performance magnetic memory and logic devices with high storage density, high stability, and low power consumption; in basic research, PMA can compete with many physical mechanisms to produce novel phenomena, such as The synergistic effect between t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/22C23C14/08C23C14/28C23C14/58
CPCC30B23/02C30B23/025C30B29/22C23C14/28C23C14/08C23C14/0005C23C14/5873
Inventor 闻利杰杨永杰芦增星汪志明郝险峰郭媛媛
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI