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Composition

A technology of composition and compound, applied in the direction of electrical components, nanotechnology, electric solid devices, etc., can solve problems such as poor thermal stability

Pending Publication Date: 2021-09-03
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In particular, poor thermal stability is an obstacle for the practical application of quantum dot-based devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0165] Working Example 1 - Synthesis of InP / ZnSe Quantum Materials

[0166] 0.7 μL of InP cores were prepared using a publicly available method (as described in WO 2018 / 215396 A1), which was then mixed with 600 μL of toluene and transferred to a four-necked flask. Then add 18.8mL oleylamine and 4.4mL ZnCl 2 . The mixture was kept under vacuum at 35 °C for 30 min. Then, the mixture was heated to 250° C. under argon for 30 minutes.

[0167] After the above nucleation treatment, the mixture was cooled to 190 °C and 10.4 mL of ZnCl in oleylamine was added 2 . At 180 °C, 1.8 mL of TOP:Se (2M) was injected. The mixture was heated to 200°C for 30 minutes and then to 320°C before injecting 12.4 mL of zinc undecylanate (0.4M) in oleylamine.

[0168] Working Example 2 - Purification of the Quantum Material from Example 1 .

[0169] 1 mL of the sample from Example 1 was purified from excess ligand using toluene and ethanol as solvent and antisolvent, respectively, followed by cent...

Embodiment 6

[0178] Working example 6——Synthesis of InP / ZnSeS quantum material

[0179] Mix 0.7 μL of InP cores with 600 μl of toluene and transfer to a four-necked flask. Then add 14.8mL oleylamine and 4.4mL ZnCl 2 . The mixture was kept under vacuum at 35 °C for 30 min. Then, the mixture was heated to 250° C. under argon for 30 minutes.

[0180] After the above nucleation treatment, the mixture was cooled to 190 °C and 10.4 mL of ZnCl in oleylamine was added 2 . At 180 °C, 1.8 mL of TOP:Se (2M) was injected. The mixture was heated to 200° C. for 30 minutes, then to 320° C., and then 12.4 mL (0.4 M) of zinc undecanoate in oleylamine and 0.54 mL of dodecylmercaptan were added dropwise.

[0181] Working Example 7 - Purification of Quantum Material from Example 6

[0182] 1 mL of the sample from Example 6 was purified from excess ligand using toluene and ethanol as solvent and antisolvent, respectively, followed by centrifugation and drying. This cleaning was repeated twice. The obt...

Embodiment 8

[0184] Working Example 8 - Stability of Quantum Material from Example 7 in Thermal Tests

[0185] 0.5 mL of quantum dots (30 mg / mL) in toluene was dried under argon to remove toluene. The vial was then opened to air and heated at 150°C for 1 hour. Then, the solid was redissolved in toluene, and the QY was measured using a Hamamatsu absolute quantum yield spectrometer (model: Quantaurus C11347).

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Abstract

The present invention relates to a composition comprising at least one nanosized light emitting material.

Description

technical field [0001] The present invention relates to a composition comprising at least one nano-sized luminescent material and at least one compound represented by general formula (1) or (2) depicted below as an additive, and to a formulation comprising said composition. preparation. Furthermore, the invention relates to the use of said composition in a method for producing an optical medium and to the use of said composition in a device, as well as to an optical medium and an optical device. Background technique [0002] The stability of nanoscale luminescent materials such as quantum dots (QDs) is essential for their application in eg electronic, optical or biomedical devices. Stable QDs do not lose their photoluminescent intensity during device fabrication and handling for device operation that exposes the QDs to high temperature, air, moisture and chemicals. [0003] In particular, poor thermal stability is an obstacle to the practical application of quantum dot-bas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88
CPCC09K11/70C09K11/883C09K11/025C09K11/74H10K85/00H10K50/16B82Y20/00B82Y40/00C09K11/0883
Inventor S·卡里利
Owner MERCK PATENT GMBH