Method for acquiring key parameters of avalanche diode

A technology of avalanche diodes and key parameters, which is applied in the field of obtaining key parameters of avalanche diodes, and can solve problems such as device operating point deviation and inaccurate breakdown voltage

Active Publication Date: 2021-09-07
武汉光谷量子技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the defects existing in the prior art, the purpose of the present invention is to provide a method for obtaining the key parameters of the avala

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  • Method for acquiring key parameters of avalanche diode
  • Method for acquiring key parameters of avalanche diode
  • Method for acquiring key parameters of avalanche diode

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Embodiment Construction

[0032] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, but not all of them. Based on the embodiments in the present application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present application.

[0033] Embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0034] figure 1 It is a flowchart of a method for obtaining key parameters of an avalanche diode in an embodiment of the present invention, such as figure 1 As shown, the present invention provides a m...

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Abstract

The invention relates to the technical field of key parameters of InP-based avalanche diode devices, in particular to a method for acquiring key parameters of an avalanche diode, which comprises the following steps of determining corresponding measuring point gains according to measuring point light currents by actually measuring the measuring point light currents and measuring point voltages of a plurality of measuring points of a to-be-measured avalanche diode, carrying out mathematical transformation on the measuring point gain and the measuring point voltage of the corresponding measuring point, then carrying out linear fitting, and determining the slope and the intercept of a fitting line shape, and in practical application, determining the breakdown voltage through the slope and the intercept. The corresponding relation between the gain of the device and the applied voltage can be determined according to the slope and the breakdown voltage, the M value at several times of Vbr can be rapidly obtained, and the condition that the M value is obtained by calculating the voltage value according to the Vbr and the multiple and then searching the corresponding light current is not needed; according to the scheme, the problem of device working point deviation caused by inaccurate breakdown voltage calculation according to the fixed dark current can be solved.

Description

technical field [0001] The invention relates to the technical field of key parameters of InP-based avalanche diode devices, in particular to a method for obtaining key parameters of an avalanche diode. Background technique [0002] In a PN junction with a lower material doping concentration, when the reverse voltage of the PN junction increases, the electric field in the space charge region increases accordingly. In this way, the electrons and holes passing through the space charge region will gain more energy under the action of the electric field, and the electrons and holes moving in the crystal will continue to collide with the crystal atoms. When the energy of the electrons and holes When large enough, electrons in covalent bonds can be excited by such collisions to form free electron-hole pairs. The newly generated electrons and holes also move in the opposite direction, regain energy, and then generate electron-hole pairs through collisions, which is the carrier mult...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2632
Inventor 胡勤伟王肇中
Owner 武汉光谷量子技术有限公司
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