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Integrated Assemblies and Methods of Forming Integrated Assemblies

A technology of assemblies and extensions, applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., can solve the problems of mutual interference of conductive structures 640 and 704, problematic parasitic capacitance, etc.

Pending Publication Date: 2021-09-07
北极星特许集团有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0040] The problem with the configuration of Figures 9-9C is that the conductive structures 640 and 704 of Figure 9A may interfere with each other
Further, the proximity of structures 640 and 704 may create problematic parasitic capacitance between adjacent structures 640 and 704

Method used

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  • Integrated Assemblies and Methods of Forming Integrated Assemblies
  • Integrated Assemblies and Methods of Forming Integrated Assemblies
  • Integrated Assemblies and Methods of Forming Integrated Assemblies

Examples

Experimental program
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Embodiment Construction

[0064] Some embodiments include assemblies having memory blocks spaced apart from each other by a middle panel. The bottom surface of the intermediate panel is along the source structures and along gaps formed between the source structures. The area along the bottom surface of the gap is offset in height relative to the area along the bottom surface of the source structure. Some embodiments include methods of forming assemblies. refer to Figure 10-20 Example embodiments are described.

[0065] refer to Figure 10-10C , an integrated assembly (architecture, fabric, etc.) 10 includes a pair of memory block regions 12 and 14 . Memory block regions 12 and 14 may be similar to regions 608 and 610 described above with reference to FIGS. 5-9 .

[0066] Panels 16 , 18 and 20 are disposed within assembly 10 . Panel 18 spaces (separates) memory block area 12 from memory block area 14 .

[0067] Panels 16 , 18 and 20 include panel material 22 . Panel material 22 may comprise any ...

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PUM

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Abstract

The invention relates to integrated assemblies and methods of forming the same. Some embodiments include the integrated assembly having a memory array region which includes channel material pillars extending through a stack of alternating conductive and insulative levels. A second region is adjacent the memory array region. A conductive expanse is within the memory array region and electrically coupled with the channel material of the channel material pillars. A panel extends across the memory array region and the second region. The panel separates one memory block region from another. The panel has a first portion over the conductive expanse, and has a second portion adjacent the first portion. The panel has a bottom surface. A first segment of the bottom surface is adjacent an upper surface of the conductive expanse. A segment of the bottom surface within the second portion is elevationally offset relative to the first segment. Some embodiments include the methods of forming the integrated assemblies.

Description

technical field [0001] The present application relates to integrated assemblies (eg, memory devices; eg, devices suitable for use with NAND). The present application further relates to methods of forming integrated assemblies. Background technique [0002] Memory provides data storage for electronic systems. Flash memory is a type of memory and has many uses in modern computers and devices. For example, a modern personal computer may have a BIOS stored on a flash memory chip. As another example, it is becoming more common for computers and other devices to replace conventional hard drives with flash memory in solid-state drives. As yet another example, flash memory is popular in wireless electronic devices because it enables manufacturers to support new communication protocols as they become standardized and provides the ability to remotely upgrade devices with enhanced features. [0003] NAND may be the basic architecture of flash memory and may be configured to include...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/12G11C5/06G11C5/02G11C5/04H10B41/27H10B43/27
CPCG11C5/12G11C5/06G11C5/025G11C5/04G11C8/12G11C16/0483H10B43/10H10B43/27H10B41/27
Inventor 罗双强
Owner 北极星特许集团有限责任公司