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Substrate treatment method and substrate treatment device

A substrate processing method and substrate technology, which can be used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as poor etching

Pending Publication Date: 2021-09-07
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there is a problem of poor etching

Method used

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  • Substrate treatment method and substrate treatment device
  • Substrate treatment method and substrate treatment device
  • Substrate treatment method and substrate treatment device

Examples

Experimental program
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Embodiment Construction

[0047] Below, refer to the attached Figure 1 Embodiments will be described. In addition, the drawings are diagrams schematically shown, and for convenience of description, the configuration is appropriately omitted or simplified. In addition, the relationship between the size and position of the configuration shown in the drawings is not necessarily described accurately, and can be appropriately changed.

[0048] In addition, in the description shown below, the same reference numerals are assigned to the same components and shown, and their names and functions are also set to be the same. Therefore, there are cases where detailed descriptions thereof are omitted to avoid repetition.

[0049]

[0050] figure 1 It is a diagram schematically showing an example of the configuration of the substrate processing apparatus 100 . The substrate processing apparatus 100 supplies an etchant to the surface of the substrate W1 to etch the surface of the substrate W1. The substrate W1...

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PUM

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Abstract

Provided is a technology, with a simple structure, capable of reducing an etching failure occurrence rate. A substrate treatment method includes a substrate holding step, a charging step, and an etching liquid supply step. In the substrate holding step, a substrate is held by a substrate holding unit. In the charging step, the substrate is rotated about a rotational axis passing through the center of the substrate, a first mixed liquid obtained by mixing pure water with an added gas is supplied to the substrate at a first mixing concentration for enabling the entire surface of a first main surface of the substrate to be charged positively, and thereby the substrate is charged. In the etching liquid supply step, after or in parallel with the charging step, the substrate is rotated about the rotational axis, and an etching liquid is supplied to the first main surface of the substrate.

Description

technical field [0001] The present application relates to a substrate processing method and a substrate processing device. Background technique [0002] Conventionally, there has been proposed a substrate processing apparatus that supplies an acidic or alkaline etchant to the surface of a silicon substrate to etch the surface. On the surface of the substrate, for example, an object to be etched (such as a semiconductor layer such as silicon or an insulating layer such as silicon oxide) and a resist pattern are formed, and an etching device etches the object to be etched. [0003] When an acidic or alkaline etchant is supplied to the surface of the substrate, the surface of the substrate is negatively charged by the electric double layer. Thus, the sidewall of the pattern is also negatively charged. The charge on the sidewall of the pattern is near the sidewall of the pattern, repelling the negative ions in the etching solution. The narrower the gap between the patterns, t...

Claims

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Application Information

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IPC IPC(8): H01L21/304H01L21/306
CPCH01L21/306H01L21/304H01L21/32134H01L21/31111H01L21/02068H01L21/0206H01L21/67075
Inventor 塙洋祐
Owner DAINIPPON SCREEN MTG CO LTD
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