Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-noise millimeter wave phase-locked loop frequency synthesizer based on time error amplifier

A technology of frequency synthesizer and time error, applied in automatic control of power, electrical components, etc., can solve problems such as poor noise performance and worsening noise in the phase-locked loop band, and achieve the effect of overcoming noise

Active Publication Date: 2021-09-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a kind of low-noise millimeter-wave phase-locked loop frequency synthesizer based on the time error amplifier for the problem of poor noise performance of the traditional charge pump phase-locked loop frequency synthesizer. Detector, PFD) is inserted into the back end of a time error amplifier (Time Amplifier, TA) to overcome the problem that the charge pump (Charge Pump, CP) in the traditional charge pump phase-locked loop structure deteriorates the in-band noise of the phase-locked loop; at the same time, Keep the frequency divider in the feedback loop to be compatible with DSM technology and complete the fractional frequency division function

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-noise millimeter wave phase-locked loop frequency synthesizer based on time error amplifier
  • Low-noise millimeter wave phase-locked loop frequency synthesizer based on time error amplifier
  • Low-noise millimeter wave phase-locked loop frequency synthesizer based on time error amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0022] This embodiment provides a low-noise millimeter-wave phase-locked loop frequency synthesizer 10 based on a time error amplifier, and its structure is as follows figure 1 shown, where f in is the crystal oscillator signal, f out It is the output signal after frequency multiplication by the phase-locked loop; it specifically includes: phase frequency detector 101 (Phase Frequency Detector, PFD), time error amplifier 102 (Time Amplifier, TA), charge pump 103 (Charge Pump, CP), A loop filter 104 (Loop Filter, LF), a voltage-controlled oscillator 105 (VoltageControlled Oscillator, VCO), a frequency divider 107, and a Σ-Δ modulator 106 (DSM); wherein, the input signal f in Connect to the crystal oscillator signal input terminal of PFD101, PFD 101 output signal Connected to TA 102 input, and generate output signal through TA 102 Signal Connect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of digital-analog hybrid circuits, relates to a phase-locked loop frequency synthesizer structure, and particularly provides a low-noise millimeter wave phase-locked loop frequency synthesizer based on a time error amplifier, which is used for solving the problem that in-band noise of a phase-locked loop is deteriorated by a charge pump in a traditional charge pump phase-locked loop structure. On the basis of a traditional charge pump phase-locked loop frequency synthesizer structure, a primary time error amplifier (TA) is inserted between a phase frequency detector (PFD) and a charge pump (CP), the time error amplifier linearly amplifies a phase error signal output by the phase frequency detector by K times to generate a signal, and the signal is input into the charge pump; the noise contributed to the output end of the phase-locked loop frequency synthesizer by the charge pump is effectively reduced by K times, namely the problem that in-band noise of a phase-locked loop is deteriorated by the charge pump in a traditional charge pump phase-locked loop structure is solved; meanwhile, a frequency divider is reserved in a feedback loop, so that the frequency divider is compatible with the DSM technology, and the fractional frequency division function is completed.

Description

technical field [0001] The invention belongs to the field of digital-analog hybrid circuits, and relates to a phase-locked loop frequency synthesizer structure, in particular to a low-noise millimeter-wave phase-locked loop frequency synthesizer based on a time error amplifier. Background technique [0002] With the advent of 5G communication technology, wireless communication systems have higher and higher requirements on the noise performance of clock sources, and low-noise clock sources are prerequisites for various applications; and phase-locked loop frequency synthesizers are commonly used as clock sources in wireless communication systems , low-noise phase-locked loop frequency synthesizer has become the focus of research. [0003] At present, PLL frequency synthesizers mainly include traditional charge-pump PLL frequency synthesizers and sub-sampling PLL frequency synthesizers; among them, the sub-sampling PLL structure greatly promotes the in-band PLL However, since...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03L7/085H03L7/093H03L7/099H03L7/18
CPCH03L7/085H03L7/099H03L7/093H03L7/18Y02D30/70
Inventor 王政耿新林田怡博肖尧衡浩谢倩
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products