Dry etching gas control system

Abstract

The invention provides a dry etching gas control system which comprises an etching cavity; the etching cavity is a sealed cavity, and a gas shunting disc and a wafer bearing disc are arranged in the etching cavity. The gas shunting disc is positioned at the upper part of the etching cavity; a plurality of gas inlet holes are formed in the gas shunting disc, and the density of the gas inlet holes is gradually reduced from the center to the edge of the gas shunting disc; and the wafer bearing disc is located at the lower part of the etching cavity, and the wafer bearing disc is correspondingly arranged below the gas shunting disc. The distribution condition of etching gas in the etching cavity is controlled through the gas shunting disc, and the gas inlet holes in the gas shunting disc are not uniformly distributed but are gradually sparsely distributed from the center to the edge, so that the etching gas entering the etching cavity is more distributed at the center and less distributed at the periphery, and under the action of a gas extraction system, the etching gas actually contacted with a wafer is uniformly distributed, and the etching uniformity of the wafer is improved.

Description

technical field [0001] The invention relates to the fields of semiconductor preparation equipment and light-emitting diode preparation equipment, and relates to a dry etching gas control system, in particular to a gas etching system capable of uniformly distributing etching gas and improving etching uniformity. Background technique [0002] LED, that is, light-emitting diode, emits energy through the recombination of electrons and holes, and can efficiently convert electrical energy into light energy. It has many advantages and is considered to be the next generation of new solid-state light sources entering the field of general lighting. [0003] The wafer material used to make the LED chip includes an epitaxial structure produced by epitaxy, wherein the epitaxial structure specifically includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. In the process of making LED chips, etching the wafer material is an indispensable and importan...

AI Technical Summary

Problems solved by technology

However, there is a problem of uneven distribution of etching gas in the prior art, which will lead to different etching degrees of wafer materials at different positions, resulting in the hidden danger of over-etching or under-etching, which seriously affects the yield of LED chips.

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