Read-write method and memory device

Abstract

The invention provides a read-write method and a memory device. The read-write method comprises the following steps that a read command is applied to the memory device, the read command points to address information, data to be read are read from a memory unit corresponding to the address information pointed by the read command, and if the data to be read have errors, the address information pointed by the read command is associated with a standby memory unit. According to the read-write method, the reliability of the memory device is greatly improved, and the service life of the memory device is prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor storage, in particular to a reading and writing method and a storage device. Background technique [0002] Semiconductor memory is a memory component used to store various data information. With the increase of circuit complexity, various forms of memory devices inevitably produce defective or damaged memory cells during manufacturing or use, resulting in reduced reliability and shortened lifespan of semiconductor memory devices. [0003] Therefore, how to improve the reliability of the memory device and extend the life of the memory device has become an urgent problem to be solved. Contents of the invention [0004] The technical problem to be solved by the present invention is to provide a read-write method and a memory device, which can greatly improve the reliability of the memory device and prolong the life of the memory device. [0005] The present invention provides a reading and writing me...

AI Technical Summary

Problems solved by technology

With the increase of circuit complexity, various forms of memory devices are inevitably prone to defective or damaged memory cells during manufacturing or use, resulting in reduced reliability and reduced lifespan of semiconductor memory devices

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